Memory IC 70T651S12DR product image

70T651S12DR

  • Description:IC SRAM 9MBIT PARALLEL 208PQFP
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tray

SKU:1834fa1d1e45 Category: Brand:

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70T651S12DR is listed in the Memory IC range at ChipApex. The manufacturer field lists Renesas Electronics Corporation. Its product description is IC SRAM 9MBIT PARALLEL 208PQFP. Review the specifications below when checking this part for your BOM.

Memory IC specifications for 70T651S12DR

  • Description:IC SRAM 9MBIT PARALLEL 208PQFP
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tray
  • Memory Type:Volatile
  • Memory Format:SRAM
  • Technology:SRAM - Dual Port, Asynchronous
  • Memory Size:9Mbit
  • Memory Organization:256K x 36
  • Memory Interface:Parallel
  • Clock Frequency:-
  • Write Cycle Time - Word, Page:12ns
  • Voltage - Supply:2.4V ~ 2.6V
  • Operating Temperature:0°C ~ 70°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:208-BFQFP
  • Supplier Device Package:208-PQFP (28x28)
  • Access Time:12 ns

Memory IC datasheet and documents for 70T651S12DR

70T651S12DR

Memory IC Overview

The Renesas 70T651S12DR is a 9 Mbit asynchronous dual-port static RAM with a memory organization of 256K x 36. It features a parallel interface and a maximum access time of 12 ns. The device operates on a single 2.5 V power supply within a voltage range of 2.4 V to 2.6 V, with a maximum supply current of 395 mA. It supports an industrial operating temperature range from -40 °C to +85 °C and is housed in a 208-pin PQFP surface-mount package.

Memory IC Feature Summary

  • Dual-port architecture enables simultaneous independent access to the same memory location by two separate ports.
  • Fully asynchronous operation allows flexible timing control for both read and write cycles from either port.
  • Integrated busy input facilitates port contention management when cascading multiple devices to expand data bus width.
  • Includes hardware support for semaphore signaling and interrupt flags to coordinate operations between ports.

Memory IC Applications

  • High-speed data buffering in telecommunications equipment
  • Cache memory implementation in embedded processing systems
  • Data storage in industrial automation controllers
  • Network switching and routing applications

Memory IC Procurement Notes

Verify component authenticity through authorized channels due to discontinuation status. Confirm moisture sensitivity level handling requirements during assembly. Validate package compatibility with existing PCB footprints. Check for RoHS compliance variations across production lots. Ensure proper ESD protection protocols are maintained throughout the supply chain.

Memory IC Selection Notes

Select this component for designs requiring high-speed concurrent access to shared memory resources. Consider the 256K x 36 organization for wide-data applications. Evaluate thermal performance within the specified industrial temperature range. Assess power consumption against system constraints given the 395 mA maximum current draw. Verify interface compatibility with LVTTL or CMOS logic levels.

Memory IC Part Context

This part belongs to the 70T651 series of asynchronous dual-port SRAMs manufactured by Renesas Electronics. The series provides high-density memory solutions with independent port access capabilities. The 70T651S12DR variant specifically offers 12 ns access speed in a PQFP package. It serves as a legacy component for systems requiring reliable dual-port memory functionality.

Memory IC Replacement Considerations

Publicly confirmed substitute part numbers include IDT70T651S12DR and IDT70T651S12BFI. Verify pinout and electrical specifications before substitution. Ensure package dimensions match the target application board layout. Confirm functional equivalence regarding access times and power requirements.

70T651S12DR70T651S12DR

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