Memory IC 70T651S12DRI product image

70T651S12DRI

  • Description:IC SRAM 9MBIT PARALLEL 208PQFP
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tray

SKU:23f9e165f6ec Category: Brand:

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70T651S12DRI is listed in the Memory IC range at ChipApex. The manufacturer field lists Renesas Electronics Corporation. Its product description is IC SRAM 9MBIT PARALLEL 208PQFP. Review the specifications below when checking this part for your BOM.

Memory IC specifications for 70T651S12DRI

  • Description:IC SRAM 9MBIT PARALLEL 208PQFP
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tray
  • Memory Type:Volatile
  • Memory Format:SRAM
  • Technology:SRAM - Dual Port, Asynchronous
  • Memory Size:9Mbit
  • Memory Organization:256K x 36
  • Memory Interface:Parallel
  • Clock Frequency:-
  • Write Cycle Time - Word, Page:12ns
  • Voltage - Supply:2.4V ~ 2.6V
  • Operating Temperature:-40°C ~ 85°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:208-BFQFP
  • Supplier Device Package:208-PQFP (28x28)
  • Access Time:12 ns

Memory IC datasheet and documents for 70T651S12DRI

70T651S12DRI

Memory IC Overview

The Renesas Electronics Corporation 70T651S12DRI is a high-speed asynchronous dual-port static random-access memory (SRAM) device. It provides a total storage capacity of 9 megabits, organized as 256K words by 36 bits per word. The component features a parallel interface with an access time of 12 nanoseconds. It operates on a single 2.5-volt power supply, ranging from 2.4V to 2.6V. The device is housed in a 208-pin plastic quad flat package (PQFP) measuring 28x28 millimeters. It supports an industrial operating temperature range from -40°C to +85°C.

Memory IC Feature Summary

  • Dual-port architecture enables simultaneous independent access to the same memory location by two separate ports without external arbitration logic.
  • Integrated hardware semaphore signaling and port arbitration logic facilitate efficient data exchange between the two ports.
  • Selectable I/O voltage compatibility allows operation with either 3.3V or 2.5V logic levels while maintaining a single 2.5V core supply.
  • Automatic power-down feature controlled by chip enable inputs reduces standby power consumption when the device is not actively accessed.

Memory IC Applications

  • High-speed data buffering in telecommunications systems requiring low-latency access
  • Master/Slave configurations for expanding data bus width to 72 bits or more in processing architectures
  • Real-time signal processing applications utilizing rapid write modes for consecutive data cycles

Memory IC Procurement Notes

Verify component authenticity through authorized channels due to end-of-life status. Confirm RoHS compliance requirements as the part may not meet current environmental standards. Validate pinout and electrical specifications against original datasheets before integration into legacy designs.

Memory IC Selection Notes

Select this component for applications requiring true simultaneous dual-port access without external control overhead. Consider the 208-PQFP package constraints for PCB layout. Evaluate thermal management needs within the specified industrial temperature range during system design.

Memory IC Part Context

This device belongs to the 70T651 series of asynchronous dual-port SRAMs manufactured by Renesas Electronics. It is designed for standalone use or cascaded master/slave operations. The series supports full-speed error-free operation without additional discrete logic for bus matching or depth expansion.

Memory IC Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Verify functional equivalence with other 256K x 36 dual-port SRAMs if sourcing new inventory.

70T651S12DRI70T651S12DRI

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