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70T651S12DRI is listed in the Memory IC range at ChipApex. The manufacturer field lists Renesas Electronics Corporation. Its product description is IC SRAM 9MBIT PARALLEL 208PQFP. Review the specifications below when checking this part for your BOM.
The Renesas Electronics Corporation 70T651S12DRI is a high-speed asynchronous dual-port static random-access memory (SRAM) device. It provides a total storage capacity of 9 megabits, organized as 256K words by 36 bits per word. The component features a parallel interface with an access time of 12 nanoseconds. It operates on a single 2.5-volt power supply, ranging from 2.4V to 2.6V. The device is housed in a 208-pin plastic quad flat package (PQFP) measuring 28x28 millimeters. It supports an industrial operating temperature range from -40°C to +85°C.
Verify component authenticity through authorized channels due to end-of-life status. Confirm RoHS compliance requirements as the part may not meet current environmental standards. Validate pinout and electrical specifications against original datasheets before integration into legacy designs.
Select this component for applications requiring true simultaneous dual-port access without external control overhead. Consider the 208-PQFP package constraints for PCB layout. Evaluate thermal management needs within the specified industrial temperature range during system design.
This device belongs to the 70T651 series of asynchronous dual-port SRAMs manufactured by Renesas Electronics. It is designed for standalone use or cascaded master/slave operations. The series supports full-speed error-free operation without additional discrete logic for bus matching or depth expansion.
Publicly confirmed substitute part numbers are not available in the provided documentation. Verify functional equivalence with other 256K x 36 dual-port SRAMs if sourcing new inventory.
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