Memory IC 70T653MS10BC product image

70T653MS10BC

$295.41
  • Description:IC SRAM 18MBIT PARALLEL 256CABGA
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tray

SKU:227e4a4e8dd1 Category: Brand:

  
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70T653MS10BC is listed in the Memory IC range at ChipApex. The manufacturer field lists Renesas Electronics Corporation. Its product description is IC SRAM 18MBIT PARALLEL 256CABGA. Review the specifications below when checking this part for your BOM.

Memory IC specifications for 70T653MS10BC

  • Description:IC SRAM 18MBIT PARALLEL 256CABGA
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tray
  • Memory Type:Volatile
  • Memory Format:SRAM
  • Technology:SRAM - Dual Port, Asynchronous
  • Memory Size:18Mbit
  • Memory Organization:512K x 36
  • Memory Interface:Parallel
  • Clock Frequency:-
  • Write Cycle Time - Word, Page:10ns
  • Voltage - Supply:2.4V ~ 2.6V
  • Operating Temperature:0°C ~ 70°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:256-LBGA
  • Supplier Device Package:256-CABGA (17x17)
  • Access Time:10 ns
  • Grade:-
  • Qualification:-

Memory IC datasheet and documents for 70T653MS10BC

70T653MS10BC

Memory IC Overview

The Renesas Electronics Corporation 70T653MS10BC is an asynchronous dual-port static random-access memory (SRAM) device. It features a storage capacity of 18 Mbit organized as 512K words by 36 bits. The component operates with a maximum access time of 10 ns and supports parallel interface communication. It functions within a supply voltage range of 2.4 V to 2.6 V. The device is housed in a 256-ball CABGA package measuring 17x17 mm. It is designed for industrial temperature ranges from 0°C to +70°C.

Memory IC Feature Summary

  • Dual-port architecture enabling simultaneous independent access to shared memory locations
  • Asynchronous operation allowing flexible timing control from either port
  • Integrated hardware support for semaphore signaling between ports
  • Selectable I/O power supply compatibility with LVTTL standards

Memory IC Applications

  • High-speed data buffering in telecommunications systems
  • Cache memory implementation in embedded processing units
  • Data acquisition systems requiring concurrent read/write operations
  • Network switching equipment buffer management

Memory IC Procurement Notes

Verify current availability status as the 70T653MS10BC may be discontinued or subject to long lead times. Confirm RoHS compliance requirements against specific project constraints. Check for moisture sensitivity level handling procedures during assembly. Validate that the 256-CABGA footprint matches the target PCB design specifications before ordering.

Memory IC Selection Notes

Select this component when asynchronous dual-port functionality with 36-bit word width is required. Ensure the system accommodates the 2.5V core voltage and LVTTL I/O levels. Consider the 10 ns access speed relative to processor clock rates. Verify thermal management capabilities for the specified operating temperature range.

Memory IC Part Context

This part belongs to the 70T653M series of high-speed dual-port SRAMs manufactured by Renesas Electronics. The series includes variants with different access speeds and temperature grades. The 70T653MS10BC specifically denotes the 10 ns access time version in the commercial temperature range. It shares architectural similarities with other members like the 70T653MS12BCI but differs in performance parameters.

Memory IC Replacement Considerations

The 70T653MS12BC is listed as a potential alternative. Verify pinout compatibility and electrical parameter differences before substitution.

70T653MS10BC70T653MS10BC
$295.41
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