70T653MS10BC8

Memory IC Overview

The Renesas Electronics Corporation 70T653MS10BC8 is an asynchronous dual-port static random-access memory (SRAM) IC. It features a storage capacity of 18 Mbit, organized as 512K x 36 bits. The device supports parallel interface communication with a maximum access time of 10 ns. It operates within a voltage range of 2.4 V to 2.6 V and utilizes a 256-CABGA package measuring 17x17 mm. The component is designed for standard power applications and supports single data rate (SDR) operations.

Memory IC Feature Summary

• Dual-port architecture enabling independent simultaneous access by two processors
• Asynchronous operation without clock synchronization requirements
• Automatic power-down mode for reduced standby current consumption

Memory IC Applications

• High-speed data buffering in telecommunications systems
• Cache memory implementation in embedded processing units
• Data storage in industrial control network interfaces

Memory IC Procurement Notes

Verify the specific suffix BC8 against official Renesas documentation to confirm pinout compatibility and electrical characteristics. Ensure the procurement channel provides original manufacturer packaging to maintain component integrity. Confirm RoHS compliance status and humidity sensitivity handling requirements prior to assembly. Cross-reference the part number with the latest datasheet revision to avoid obsolete specifications.

Memory IC Selection Notes

Select this component when a high-density 18 Mbit dual-port SRAM with 10 ns access speed is required. The 256-CABGA package suits surface-mount designs with space constraints. Consider the 2.5V operating voltage and asynchronous nature for system integration. Evaluate thermal performance and power consumption against alternative memory solutions for the specific application environment.

Memory IC Part Context

This part belongs to the 70T653M series of high-speed asynchronous dual-port SRAMs from Renesas Electronics. The series is engineered for demanding applications requiring fast, independent read/write access from two distinct masters. The 70T653MS10BC8 variant specifically denotes the 10 ns speed grade and CABGA-256 package configuration within this product family.

Memory IC Replacement Considerations

The IDT70T653MS10BC8 is a documented equivalent part number for this component. Verify functional compatibility and pin alignment before substitution. Other variants in the 70T653M series may offer different access times or package types but share similar architectural features.