Memory IC 70T653MS10BCG product image

70T653MS10BCG

$292.12
  • Description:IC SRAM 18MBIT PARALLEL 256CABGA
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tray

SKU:f07b69e4e0db Category: Brand:

  
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70T653MS10BCG is listed in the Memory IC range at ChipApex. The manufacturer field lists Renesas Electronics Corporation. Its product description is IC SRAM 18MBIT PARALLEL 256CABGA. Review the specifications below when checking this part for your BOM.

Memory IC specifications for 70T653MS10BCG

  • Description:IC SRAM 18MBIT PARALLEL 256CABGA
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tray
  • Memory Type:Volatile
  • Memory Format:SRAM
  • Technology:SRAM - Dual Port, Asynchronous
  • Memory Size:18Mbit
  • Memory Organization:512K x 36
  • Memory Interface:Parallel
  • Clock Frequency:-
  • Write Cycle Time - Word, Page:10ns
  • Voltage - Supply:2.4V ~ 2.6V
  • Operating Temperature:0°C ~ 70°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:256-LBGA
  • Supplier Device Package:256-CABGA (17x17)
  • Access Time:10 ns
  • Grade:-
  • Qualification:-

Memory IC datasheet and documents for 70T653MS10BCG

70T653MS10BCG

Memory IC Overview

The Renesas Electronics Corporation 70T653MS10BCG is an asynchronous dual-port static random-access memory (SRAM) with a total storage capacity of 18 Mbit. The device features a memory organization of 512 k x 36 bits and supports parallel interface operations. It offers a maximum access time of 10 ns and operates within a supply voltage range of 2.4 V to 2.6 V. The component is housed in a 256-ball CABGA package and is designed for surface mount installation. It functions within a commercial temperature range from 0°C to +70°C.

Memory IC Feature Summary

  • Dual-port architecture enables simultaneous independent access to the same memory location by two separate ports.
  • Includes RapidWrite mode functionality to simplify high-speed consecutive write cycles.
  • Supports depth expansion through Dual Chip Enables without requiring external logic.
  • Features on-chip hardware support for semaphore signaling and interrupt flags between ports.

Memory IC Applications

  • High-speed data buffering in telecommunications systems
  • Cache memory implementation in embedded processing applications
  • Data storage in industrial control systems requiring concurrent port access

Memory IC Procurement Notes

Verify the specific suffix 'G' against official manufacturer documentation to confirm compliance with RoHS directives and lead-free status, as standard variants may differ. Confirm that the commercial temperature grade (0°C to +70°C) aligns with system requirements, noting that industrial grades are available under different suffixes. Ensure the 256-CABGA footprint matches the target PCB design constraints.

Memory IC Selection Notes

Select this component when a 512 k x 36 bit organization is required for dual-port applications. The 10 ns access speed suits high-throughput asynchronous interfaces. Verify power supply compatibility with the specified 2.5V core and LVTTL I/O levels. Consider the CABGA-256 package dimensions for board space allocation and thermal management needs relative to the maximum current consumption specifications.

Memory IC Part Context

This part belongs to the 70T653M series of asynchronous dual-port SRAMs manufactured by Renesas Electronics. The series provides high-speed memory solutions with interleaved I/Os and flexible power options. Variants within the family differ primarily in access times, temperature ranges, and packaging configurations while maintaining the core 512 k x 36 architecture.

Memory IC Replacement Considerations

The 70T653MS12BCI is a documented alternative offering similar architecture with a 12 ns access time. Verify pinout compatibility and electrical characteristics before substitution. Other members of the 70T653M series may serve as replacements if timing or environmental specifications allow.

70T653MS10BCG70T653MS10BCG
$292.12
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