Memory IC 70T659S10BFI product image

70T659S10BFI

$194.13
  • Description:IC SRAM 4.5MBIT PAR 208CABGA
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tray

SKU:18c59fa44355 Category: Brand:

  
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70T659S10BFI is listed in the Memory IC range at ChipApex. The manufacturer field lists Renesas Electronics Corporation. Its product description is IC SRAM 4.5MBIT PAR 208CABGA. Review the specifications below when checking this part for your BOM.

Memory IC specifications for 70T659S10BFI

  • Description:IC SRAM 4.5MBIT PAR 208CABGA
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tray
  • Memory Type:Volatile
  • Memory Format:SRAM
  • Technology:SRAM - Dual Port, Asynchronous
  • Memory Size:4.5Mbit
  • Memory Organization:128K x 36
  • Memory Interface:Parallel
  • Clock Frequency:-
  • Write Cycle Time - Word, Page:10ns
  • Voltage - Supply:2.4V ~ 2.6V
  • Operating Temperature:-40°C ~ 85°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:208-LFBGA
  • Supplier Device Package:208-CABGA (15x15)
  • Access Time:10 ns

Memory IC datasheet and documents for 70T659S10BFI

70T659S10BFI

Memory IC Overview

The Renesas Electronics Corporation 70T659S10BFI is a dual-port static random-access memory (SRAM) device. It features a storage capacity of 4 Mbit organized as 128 k x 36 bits. The component operates with an access time of 12 ns and supports parallel interface communication. It functions within a supply voltage range of 2.4 V to 2.6 V, with a maximum power current of 395 mA. The device is designed for surface mount installation in a 208-pin CABGA package. It supports asynchronous single data rate operations and is rated for industrial temperature ranges from -40°C to +85°C.

Memory IC Feature Summary

  • Provides independent read/write ports for simultaneous data access without bus contention
  • Supports high-speed asynchronous parallel data transfer with 12 ns access latency
  • Operates on standard low-voltage power supplies suitable for embedded systems

Memory IC Applications

  • High-performance networking equipment requiring fast packet buffering
  • Industrial control systems needing reliable data logging and processing
  • Telecommunications infrastructure utilizing synchronous serial interfaces

Memory IC Procurement Notes

Verify the specific suffix BFI against official Renesas documentation to confirm package type and temperature grade. Confirm RoHS compliance status as sources indicate non-compliance. Check for active production status or end-of-life notices before ordering. Ensure compatibility with existing PCB footprints for the 208-CABGA package. Validate moisture sensitivity levels for proper handling during assembly.

Memory IC Selection Notes

Select this component when dual-port architecture is required for concurrent master-slave operations. Compare access speeds and voltage requirements against alternative SRAM families. Consider the 128k x 36 organization width for specific data bus alignment needs. Evaluate thermal performance within the specified industrial temperature range. Assess power consumption limits relative to system cooling capabilities.

Memory IC Part Context

This part belongs to the Renesas 70T659 series of dual-port SRAMs. It shares architectural similarities with other members like the 70T659S12BFI but differs in speed grades and packaging options. The series targets applications demanding high bandwidth and low latency memory solutions. It complements Renesas' broader portfolio of memory and logic products.

Memory IC Replacement Considerations

Public confirmed substitute part numbers are not available in the provided source material.

70T659S10BFI70T659S10BFI
$194.13
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