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70T659S10BFI8 is listed in the Memory IC range at ChipApex. The manufacturer field lists Renesas Electronics Corporation. Its product description is IC SRAM 4.5MBIT PAR 208CABGA. Review the specifications below when checking this part for your BOM.
The 70T659S10BFI8 is a dual-port static random-access memory (SRAM) integrated circuit manufactured by Renesas Electronics Corporation. It provides a total storage capacity of 4.5 Mbit, organized as 128K words by 36 bits. The device features asynchronous parallel interfaces with a maximum access time of 10 ns. It operates within a supply voltage range of 2.4V to 2.6V and supports an industrial temperature range from -40°C to +85°C. The component is housed in a 208-lead CABGA package measuring 15x15 mm.
Verify the specific suffix 'I8' against the official datasheet to confirm the tape and reel packaging configuration. Confirm RoHS compliance status as historical records indicate variations within this family. Check for End-of-Life notifications or Product Change Notices regarding label changes or material updates before finalizing procurement plans.
Select this component when independent dual-port access is required for high-bandwidth applications. Ensure the system design accommodates the 2.5V nominal supply voltage and the 208-CABGA footprint. Verify that the 10 ns access speed meets the timing requirements of the host processor interface.
This part belongs to the 70T659 series of dual-port SRAMs. It shares architectural similarities with other members like the 70V659 but differs in operating voltage and temperature rating. The 70T659 series is designed for applications requiring high reliability and fast data transfer rates between two independent masters.
Check for direct pin-compatible replacements within the 70T659 family that match the voltage and temperature specifications. Verify if alternative packages are available from the manufacturer for updated manufacturing processes.
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