Memory IC 70T659S10DR product image

70T659S10DR

  • Description:IC SRAM 4.5MBIT PARALLEL 208PQFP
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tray

SKU:29a0f27fe1d7 Category: Brand:

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70T659S10DR is listed in the Memory IC range at ChipApex. The manufacturer field lists Renesas Electronics Corporation. Its product description is IC SRAM 4.5MBIT PARALLEL 208PQFP. Review the specifications below when checking this part for your BOM.

Memory IC specifications for 70T659S10DR

  • Description:IC SRAM 4.5MBIT PARALLEL 208PQFP
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tray
  • Memory Type:Volatile
  • Memory Format:SRAM
  • Technology:SRAM - Dual Port, Asynchronous
  • Memory Size:4.5Mbit
  • Memory Organization:128K x 36
  • Memory Interface:Parallel
  • Clock Frequency:-
  • Write Cycle Time - Word, Page:10ns
  • Voltage - Supply:2.4V ~ 2.6V
  • Operating Temperature:0°C ~ 70°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:208-BFQFP
  • Supplier Device Package:208-PQFP (28x28)
  • Access Time:10 ns

Memory IC datasheet and documents for 70T659S10DR

70T659S10DR

Memory IC Overview

The 70T659S10DR is a dual-port asynchronous static random-access memory (SRAM) manufactured by Renesas Electronics Corporation. It provides a total storage capacity of 4.5 Mbit, organized as 128K words by 36 bits. The device features a parallel interface with an access time and write cycle time of 10 ns. It operates on a single 2.5V power supply within a voltage range of 2.4V to 2.6V. The component is housed in a 208-pin PQFP package measuring 28x28 mm and supports surface mount installation. It functions within a commercial temperature range of 0°C to 70°C.

Memory IC Feature Summary

  • Dual-port architecture enables simultaneous independent access to the same memory location from two separate ports.
  • Asynchronous operation allows flexible timing control without reliance on a global clock signal for data transfers.
  • Integrated semaphore signaling hardware facilitates contention management and synchronization between the two ports.

Memory IC Applications

  • High-speed data buffering in telecommunications equipment
  • Cache memory implementation in embedded processing systems
  • Data logging applications requiring rapid concurrent read/write operations

Memory IC Procurement Notes

Verify component authenticity through authorized distributors due to end-of-life status. Confirm RoHS compliance requirements as the part may not meet current environmental standards. Validate pin compatibility and thermal characteristics against existing PCB layouts before integration into new designs.

Memory IC Selection Notes

Select this component when dual-port concurrency is required for 36-bit wide data paths. Ensure system power supplies strictly maintain the 2.4V to 2.6V range to prevent operational instability. Consider the 208-PQFP package dimensions for adequate board space allocation and thermal dissipation needs.

Memory IC Part Context

This part belongs to the 70T659 family of high-speed dual-port SRAMs. It shares architectural similarities with other members like the 70T659S10BCI but differs in packaging and temperature rating. The series is designed for applications demanding low latency and high throughput in parallel data processing environments.

Memory IC Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Verify if alternative packages within the same family, such as the BCI variant, meet specific thermal or form-factor constraints.

70T659S10DR70T659S10DR

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