Memory IC 70T659S12BFI product image

70T659S12BFI

$182.99
  • Description:IC SRAM 4.5MBIT PAR 208CABGA
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tray

SKU:299a714ac28d Category: Brand:

  
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70T659S12BFI is listed in the Memory IC range at ChipApex. The manufacturer field lists Renesas Electronics Corporation. Its product description is IC SRAM 4.5MBIT PAR 208CABGA. Review the specifications below when checking this part for your BOM.

Memory IC specifications for 70T659S12BFI

  • Description:IC SRAM 4.5MBIT PAR 208CABGA
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tray
  • Memory Type:Volatile
  • Memory Format:SRAM
  • Technology:SRAM - Dual Port, Asynchronous
  • Memory Size:4.5Mbit
  • Memory Organization:128K x 36
  • Memory Interface:Parallel
  • Clock Frequency:-
  • Write Cycle Time - Word, Page:12ns
  • Voltage - Supply:2.4V ~ 2.6V
  • Operating Temperature:-40°C ~ 85°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:208-LFBGA
  • Supplier Device Package:208-CABGA (15x15)
  • Access Time:12 ns

Memory IC datasheet and documents for 70T659S12BFI

70T659S12BFI

Memory IC Overview

The 70T659S12BFI is a high-speed asynchronous dual-port static random-access memory (SRAM) manufactured by Renesas Electronics. It features a storage organization of 128K x 36 bits, providing a total capacity of 4 Mbit. The device operates with a supply voltage range of 2.4 V to 2.6 V and supports a maximum access time of 12 ns. It utilizes a parallel interface and is housed in a 208-pin CABGA package suitable for surface mount technology. The component is designed for industrial temperature ranges from -40°C to +85°C.

Memory IC Feature Summary

  • Supports independent read/write operations on both ports simultaneously without conflict
  • Includes automatic power-down mode controlled by chip enable inputs to reduce standby current
  • Features interleaved I/O architecture to simplify system board layout

Memory IC Applications

  • Stand-alone dual-port RAM systems
  • Master/Slave dual-port configurations for 72-bit or wider word systems
  • High-speed data buffering in telecommunications equipment

Memory IC Procurement Notes

Verify the specific suffix BFI corresponds to the required 208-CABGA package and lead finish before ordering. Confirm that the 2.5V operating voltage aligns with the target system design. Check for RoHS compliance status as indicated in official documentation, noting potential restrictions on hazardous substances. Ensure moisture sensitivity level handling procedures are followed during assembly to prevent damage.

Memory IC Selection Notes

Select this component when a 128K x 36 bit asynchronous dual-port SRAM is required with 12 ns access speed. It is suitable for applications needing simultaneous independent port access. Consider the 2.5V supply requirement and 208-pin package constraints. Evaluate if the automatic power-down feature meets low-power standby requirements compared to other series members.

Memory IC Part Context

This part belongs to the 70T659 family of dual-port SRAMs from Renesas. It shares architectural similarities with other devices in the series but differs in voltage levels and packaging options. The 70T659 series is designed for high-performance memory applications requiring fast, conflict-free data access between two independent masters.

Memory IC Replacement Considerations

Check for direct pin-compatible replacements within the same family, such as variants with different access times or packages. Verify electrical compatibility regarding voltage levels and signal integrity before substituting.

70T659S12BFI70T659S12BFI
$182.99
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