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70T659S12BFI is listed in the Memory IC range at ChipApex. The manufacturer field lists Renesas Electronics Corporation. Its product description is IC SRAM 4.5MBIT PAR 208CABGA. Review the specifications below when checking this part for your BOM.
The 70T659S12BFI is a high-speed asynchronous dual-port static random-access memory (SRAM) manufactured by Renesas Electronics. It features a storage organization of 128K x 36 bits, providing a total capacity of 4 Mbit. The device operates with a supply voltage range of 2.4 V to 2.6 V and supports a maximum access time of 12 ns. It utilizes a parallel interface and is housed in a 208-pin CABGA package suitable for surface mount technology. The component is designed for industrial temperature ranges from -40°C to +85°C.
Verify the specific suffix BFI corresponds to the required 208-CABGA package and lead finish before ordering. Confirm that the 2.5V operating voltage aligns with the target system design. Check for RoHS compliance status as indicated in official documentation, noting potential restrictions on hazardous substances. Ensure moisture sensitivity level handling procedures are followed during assembly to prevent damage.
Select this component when a 128K x 36 bit asynchronous dual-port SRAM is required with 12 ns access speed. It is suitable for applications needing simultaneous independent port access. Consider the 2.5V supply requirement and 208-pin package constraints. Evaluate if the automatic power-down feature meets low-power standby requirements compared to other series members.
This part belongs to the 70T659 family of dual-port SRAMs from Renesas. It shares architectural similarities with other devices in the series but differs in voltage levels and packaging options. The 70T659 series is designed for high-performance memory applications requiring fast, conflict-free data access between two independent masters.
Check for direct pin-compatible replacements within the same family, such as variants with different access times or packages. Verify electrical compatibility regarding voltage levels and signal integrity before substituting.
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