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70T659S12BFI8 is listed in the Memory IC range at ChipApex. The manufacturer field lists Renesas Electronics Corporation. Its product description is IC SRAM 4.5MBIT PAR 208CABGA. Review the specifications below when checking this part for your BOM.
The 70T659S12BFI8 is a dual-port static random-access memory (SRAM) manufactured by Renesas Electronics Corporation. It features a storage capacity of 4 Mbit organized as 128K words by 36 bits. The device operates with an access time of 12 ns and supports parallel interface communication. It requires a supply voltage between 2.4 V and 2.6 V and functions within a temperature range of -40°C to +85°C. The component is housed in a 208-lead CABGA package measuring 15x15 mm.
Verify the specific suffix BFI8 against official Renesas documentation to confirm package type and moisture sensitivity level. Confirm RoHS compliance status, as sources indicate non-compliance. Check for product discontinuance notifications or end-of-life status prior to procurement planning.
Select this component when a 4 Mbit dual-port SRAM with 12 ns access speed is required. Ensure the design accommodates the 2.4 V to 2.6 V core voltage range. Verify that the 208-CABGA footprint fits the PCB layout constraints and thermal requirements for the specified operating temperature range.
This part belongs to the 70T659 series of dual-port SRAMs. It shares architectural similarities with other devices in the family but differs in density and pinout configuration. The 70T659 series is designed for applications requiring high-bandwidth data sharing between two processors or controllers.
Publicly confirmed substitute part numbers are not available in the provided source material.
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