70V05L20PFI8

Memory IC Overview

The Renesas Electronics Corporation 70V05L20PFI8 is a dual-port static random-access memory (SRAM) integrated circuit. It provides a storage capacity of 64 kilobits, organized as 8K words by 8 bits. The device features an asynchronous parallel interface with a maximum access time of 20 nanoseconds. It operates within a supply voltage range of 3.0 volts to 3.6 volts and supports surface-mount installation in a 64-pin thin quad flat package (TQFP). The component is rated for commercial operating temperatures between 0°C and +70°C.

Memory IC Feature Summary

• Dual-port architecture enabling independent simultaneous access from two distinct processors or system buses.

Memory IC Applications

• High-speed data buffering in communication systems
• Cache memory implementation in embedded controllers
• Data logging applications requiring rapid write cycles

Memory IC Procurement Notes

Verify the specific suffix requirements against current Renesas documentation, as manufacturing changes may affect pin compatibility or electrical characteristics. Confirm RoHS compliance status and moisture sensitivity level handling procedures prior to assembly. Check for end-of-life notices or recommended replacement parts if sourcing for new designs.

Memory IC Selection Notes

Select this component when a design requires independent read/write ports for concurrent data processing. Ensure the system logic operates within the specified 3.0V to 3.6V voltage range. Verify that the 20ns access speed meets the timing constraints of the host processor interface.

Memory IC Part Context

This part belongs to the IDT 70V05 series of dual-port SRAMs. It is designed for applications needing high-bandwidth memory sharing without complex arbitration logic. The series typically offers various access speeds and organization options within the same package family.

Memory IC Replacement Considerations

Publicly confirmed substitute: 70V05L20PFGI8.