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70V05L25J8 is listed in the Memory IC range at ChipApex. The manufacturer field lists Renesas Electronics Corporation. Its product description is IC SRAM 64KBIT PARALLEL 68PLCC. Review the specifications below when checking this part for your BOM.
The 70V05L25J8 is a dual-port static random access memory (SRAM) integrated circuit manufactured by Renesas Electronics. It features a storage capacity of 64 kbit organized as 8K x 8 words. The device operates with an asynchronous parallel interface and provides a maximum access time of 25 ns. It supports a supply voltage range from 3 V to 3.6 V, with a maximum power consumption current of 190 mA. The component is housed in a 68-PLCC surface-mount package and is rated for operation within a temperature range of 0°C to +70°C.
This component is officially designated as obsolete or end-of-life by the manufacturer. Availability is restricted to existing stock or third-party distributors. Verify RoHS compliance status, which may be non-compliant depending on production date. Confirm moisture sensitivity level (MSL 3) handling requirements before assembly. Cross-reference part number aliases such as IDT70V05L25J8 for legacy sourcing compatibility.
Select this part when a dual-port SRAM with 8-bit width and 25 ns speed is required for 3.3 V systems. Ensure the design accommodates the 68-PLCC package footprint and SMD mounting style. Consider the operating temperature range limits for environmental suitability. Verify that the 190 mA maximum current draw fits within the system power budget constraints.
The 70V05L25J8 belongs to the 70V05L series of dual-port SRAMs from Renesas Electronics. This series typically offers flexible memory configurations for applications requiring concurrent read/write access. The device represents a specific configuration within the broader family of asynchronous static random access memories designed for general-purpose data storage tasks.
Verify functional equivalence with IDT70V05L25J8 due to historical brand transitions. Check pinout compatibility and electrical specifications against alternative dual-port SRAMs if direct substitution is necessary.
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