71421SA35PF8

Overview

The Renesas Electronics Corporation 71421SA35PF8 is a high-speed, 16Kb (2K x 8) dual-port static random-access memory (SRAM). It features an asynchronous parallel interface with a maximum access time of 35 ns. The device operates on a single 5V ±10% power supply, ranging from 4.5V to 5.5V. It is housed in a 64-pin Thin Quad Flatpack (TQFP) package measuring 14x14 mm and supports surface-mount installation. The component is designed for industrial temperature ranges and includes automatic power-down capabilities controlled by chip enable signals.

Feature Summary

• True dual-ported memory architecture enabling simultaneous independent access to the same memory location by two separate ports without conflict.
• Asynchronous operation with fast 35 ns access times suitable for high-speed data processing applications.
• Automatic power-down feature managed by chip enable inputs to minimize standby power consumption during idle periods.

Applications

• High-speed data buffering in communication systems requiring simultaneous read/write operations.
• Cache memory implementations in embedded processors where low latency is critical.
• Network switch fabric buffers handling packet switching and routing tasks.
• Industrial control systems utilizing dual-port logic for real-time data exchange between microcontrollers.

Procurement Notes

Verify component authenticity through authorized distributors as this part may be obsolete. Confirm RoHS compliance status and moisture sensitivity level before procurement. Check for valid date codes and ensure storage conditions meet specified humidity requirements. Validate pin compatibility if replacing existing designs. Request detailed datasheets to confirm electrical specifications match system requirements.

Selection Notes

Select this component when dual-port functionality is required for concurrent data access. Ensure voltage levels align with the 4.5V to 5.5V operating range. Consider the 64-TQFP package dimensions for PCB layout constraints. Evaluate thermal performance within the specified operating temperature range. Compare access speeds against system timing requirements to verify suitability for high-speed interfaces.

Part Context

This SRAM belongs to the 71421SA/LA series, designed for use as slave devices alongside master dual-port RAMs in wider word configurations. The series supports battery backup operations for data retention. It is manufactured by Renesas Electronics Corporation, formerly IDT, and follows standard parallel SRAM architectures for reliable high-speed memory applications.

Replacement Considerations

Public confirmed substitute: 71421LA20PFG. Verify pinout compatibility and electrical parameters before substitution. Ensure package dimensions match existing PCB footprints. Confirm that the replacement meets all functional requirements of the original design.

FAQ

Can the 71421SA35PF8 support simultaneous reads and writes?

Yes, the true dual-port architecture allows independent access to the same memory location by both ports simultaneously without conflict.

What is the power supply requirement for this SRAM?

The device requires a single 5V ±10% power supply, operating within a voltage range of 4.5V to 5.5V.