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Product Detailed Parameters
- Description:IC SRAM 32KBIT PARALLEL 68PGA
- Series:-
- Mfr:Renesas Electronics Corporation
- Package:Tube
- Memory Type:Volatile
- Memory Format:SRAM
- Technology:SRAM - Dual Port, Asynchronous
- Memory Size:32Kbit
- Memory Organization:2K x 16
- Memory Interface:Parallel
- Clock Frequency:-
- Write Cycle Time - Word, Page:55ns
- Voltage - Supply:4.5V ~ 5.5V
- Operating Temperature:-55°C ~ 125°C (TA)
- Mounting Type:Through Hole
- Package / Case:68-BPGA
- Supplier Device Package:68-PGA (29.46x29.46)
- Access Time:55 ns
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Overview
The Renesas Electronics Corporation 7143LA55GB is a high-speed, asynchronous dual-port static random-access memory (SRAM) integrated circuit. It features a storage capacity of 32 kilobits organized as 2K words by 16 bits. The device operates with a maximum access time of 55 nanoseconds and supports a parallel interface. It requires a single 5V power supply within the range of 4.5V to 5.5V. The component is housed in a 68-pin ceramic plastic leaded chip carrier package designed for surface-mount installation. It is rated for an industrial operating temperature range from -40°C to +85°C.
Feature Summary
- True dual-ported memory architecture enabling simultaneous independent access to the same memory location from both ports without conflict.
- Integrated on-chip port arbitration logic manages data bus contention automatically, eliminating the need for external discrete control circuits.
- Supports versatile write control allowing separate management of lower and upper bytes for each port to facilitate wider data bus expansion.
- Fully asynchronous operation ensures compatibility with various system clock speeds while maintaining TTL-compatible input levels.
Applications
- High-speed data buffering in telecommunications equipment requiring low-latency read/write cycles.
- Master/Slave dual-port configurations in embedded systems to expand data bus width beyond 16 bits.
- Industrial control systems operating within harsh environmental conditions defined by the extended temperature range.
- Battery-backed memory applications utilizing the device's data retention capabilities during power loss events.
Procurement Notes
Verify the specific suffix designation against official manufacturer documentation to confirm pinout compatibility and electrical specifications. Confirm RoHS compliance status as older variants may not meet current environmental directives. Check for active product change notices or end-of-life declarations prior to finalizing procurement plans. Ensure the supplier provides traceability documentation for military or industrial grade requirements if applicable.
Selection Notes
Select this component when simultaneous bidirectional data access is required without external arbitration hardware. Choose this part for designs needing a 16-bit wide data path with independent port control. Consider the 68-pin PLCC package constraints regarding PCB real estate and thermal dissipation. Evaluate the 55ns access speed against system timing requirements to ensure adequate performance margins.
Part Context
This device belongs to the 7143SA/LA series of dual-port SRAMs manufactured by Renesas Electronics. The series offers various speed grades and packaging options to suit different application needs. The LA suffix typically denotes the industrial temperature range variant. This family is designed to simplify system design by integrating complex arbitration logic directly onto the silicon die.
Replacement Considerations
Consult official datasheets for cross-reference information. Verify that any substitute part matches the 32Kb density, 2Kx16 organization, and 68-pin package dimensions. Ensure the replacement supports the same 55ns access time and 5V operating voltage. Confirm functional equivalence regarding the master/slave arbitration logic and byte-wide write controls.
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