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Product Detailed Parameters
- Description:IC SRAM 64KBIT PARALLEL 28CDIP
- Series:-
- Mfr:Renesas Electronics Corporation
- Package:Tube
- Memory Type:Volatile
- Memory Format:SRAM
- Technology:SRAM - Asynchronous
- Memory Size:64Kbit
- Memory Organization:8K x 8
- Memory Interface:Parallel
- Clock Frequency:-
- Write Cycle Time - Word, Page:15ns
- Voltage - Supply:4.5V ~ 5.5V
- Operating Temperature:-55°C ~ 125°C (TA)
- Mounting Type:Through Hole
- Package / Case:28-CDIP (0.300", 7.62mm)
- Supplier Device Package:28-CDIP
- Access Time:15 ns
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Overview
The Renesas Electronics Corporation 7164L15TDB is an asynchronous Static Random Access Memory (SRAM) integrated circuit with a storage capacity of 64 Kbit. It features a parallel interface and an access time of 15 ns. The device is organized as 8K x 8 bits. It operates within a supply voltage range of 4.5 V to 5.5 V and supports a maximum power supply current of 80 mA. The component is housed in a 28-CDIP package with dimensions of 0.300 inches (7.62 mm). It is designed for commercial temperature operation ranging from 0°C to +70°C.
Feature Summary
- Asynchronous parallel memory architecture for standard data buffering
- CMOS technology ensuring low power consumption during operation
- Single voltage supply compatibility with standard logic families
Applications
- Data buffering in industrial control systems
- Cache memory implementation in embedded processors
- Temporary storage in telecommunications equipment
Procurement Notes
Verify the specific suffix TDB confirms the 28-CDIP package configuration, as suffixes often denote packaging variations without altering electrical function. Confirm RoHS compliance status through official documentation, as older variants may differ. Check for End-of-Life notices or Production Change Notices that may affect long-term availability. Ensure the supplier provides traceability for the manufacturing site to guarantee quality standards are met for critical applications.
Selection Notes
Select this component when a 64 Kbit asynchronous SRAM with 15 ns speed is required in a through-hole DIP package. Compare against the 7164L20TPG if a slower 20 ns access time is acceptable for cost reduction. Consider the 71V416L15 series if higher density (4 Mbit) or surface mount packaging is needed instead. Verify voltage requirements match the 4.5 V to 5.5 V range before integration into the design.
Part Context
This part belongs to the IDT 7164L family of asynchronous SRAMs, now manufactured under Renesas Electronics following the acquisition of Integrated Device Technology. The 7164L series is widely used in legacy and industrial designs requiring reliable volatile memory. The CDIP package offers robust mechanical stability for environments where surface mount components might be susceptible to physical stress.
Replacement Considerations
IDT7164L15TDB is a direct equivalent part number. For pin-compatible alternatives, verify the 7164L20TPG for slower performance needs.
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