7164L25YG

Overview

The Renesas Electronics Corporation 7164L25YG is a static random-access memory (SRAM) integrated circuit organized as 8K x 8 bits, providing a total storage capacity of 64 kilobits. It utilizes asynchronous parallel interface technology with a maximum access time of 25 nanoseconds and a write cycle time of 25 nanoseconds. The device operates within a supply voltage range of 4.5 volts to 5.5 volts and supports surface-mount installation in a 28-pin Small Outline J-Lead (SOJ) package with a width of 0.300 inches (7.62 mm). It is rated for an ambient operating temperature range from -40°C to +85°C.

Feature Summary

• Asynchronous parallel SRAM architecture requiring no clock signals or refresh cycles for operation
• Low-power BICMOS technology designed for reduced system power consumption and cooling requirements
• TTL-compatible input and output logic levels for direct interfacing with standard digital systems

Applications

• Industrial control systems requiring reliable data retention in harsh environments
• Military-grade electronic equipment compliant with MIL-STD-883 standards
• Battery-backed backup memory applications utilizing low-voltage retention capabilities

Procurement Notes

Verify component authenticity through authorized distributors due to end-of-life status. Confirm moisture sensitivity level (MSL 3) handling requirements during assembly. Check for RoHS compliance documentation and ensure the specific suffix matches the required industrial temperature grade and package variant. Validate that the 28-SOJ footprint aligns with existing PCB designs.

Selection Notes

Select this part when a 64-kilobit non-volatile-capable memory solution is needed with 25-nanosecond speed. Ensure the design accommodates the 4.5V to 5.5V supply range and 28-pin SOJ form factor. Consider the industrial temperature rating if ambient conditions exceed commercial limits. Verify compatibility with TTL logic families for seamless integration into existing parallel bus architectures.

Part Context

This component belongs to the 7164 series of high-speed CMOS SRAMs manufactured by Renesas Electronics. It shares architectural similarities with other parts in the family but is distinguished by its specific 25-nanosecond access time and industrial temperature rating. The 7164L25YG represents a legacy product line often replaced by newer generations, yet remains specified for maintenance of established military and industrial hardware platforms.

Replacement Considerations

Publicly confirmed substitute part numbers include IDT7164L25YG. Verify pinout compatibility and electrical specifications before substitution.