7164L35TDB

7164L35TDB

  • Description:IC SRAM 64KBIT PARALLEL 28CDIP
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tube

SKU:ee6cd1cbcdd3 Category: Brand:

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Product Detailed Parameters

  • Description:IC SRAM 64KBIT PARALLEL 28CDIP
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tube
  • Memory Type:Volatile
  • Memory Format:SRAM
  • Technology:SRAM - Asynchronous
  • Memory Size:64Kbit
  • Memory Organization:8K x 8
  • Memory Interface:Parallel
  • Clock Frequency:-
  • Write Cycle Time - Word, Page:35ns
  • Voltage - Supply:4.5V ~ 5.5V
  • Operating Temperature:-55°C ~ 125°C (TA)
  • Mounting Type:Through Hole
  • Package / Case:28-CDIP (0.300", 7.62mm)
  • Supplier Device Package:28-CDIP
  • Access Time:35 ns

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7164L35TDB

Overview

The Renesas Electronics Corporation 7164L35TDB is a static random-access memory (SRAM) integrated circuit belonging to the 7164 series. It features a storage capacity of 64Kb, organized as 8K words by 8 bits. The device utilizes asynchronous parallel interface technology with a maximum access time of 35 nanoseconds. It operates within a supply voltage range of 4.5V to 5.5V and supports an industrial temperature range from -40°C to +85°C. The component is housed in a 28-pin dual in-line package (DIP) designed for through-hole mounting.

Feature Summary

  • Asynchronous parallel SRAM architecture requiring no clock or refresh cycles
  • Industrial temperature rating suitable for demanding operational environments
  • Low-power operation capability with battery backup data retention support

Applications

  • Industrial control systems requiring reliable volatile memory
  • Embedded applications utilizing through-hole DIP packaging
  • Battery-backed memory subsystems for data preservation

Procurement Notes

Verify component authenticity due to end-of-life status. Confirm package integrity and pin compatibility during replacement planning. Check RoHS compliance documentation against specific project requirements. Validate supplier authorization for legacy semiconductor sourcing. Ensure environmental specifications match target application conditions.

Selection Notes

Select this component when through-hole assembly is required for 64Kb SRAM. Choose based on the 35ns access speed requirement and industrial temperature range. Consider the 28-pin DIP form factor for existing board layouts. Evaluate low-power standby modes if system energy efficiency is critical. Verify voltage compatibility with standard 5V logic systems.

Part Context

This part belongs to the Renesas 7164 family of high-speed CMOS static RAMs. The family offers various speed grades and package options including ceramic DIP and SOJ formats. These devices are designed for general-purpose memory applications where fast access times and low power consumption are essential. The 7164 series maintains compatibility with TTL logic levels.

Replacement Considerations

IDT7164L35TDB is a confirmed substitute part number.

7164L35TDB7164L35TDB

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