7164L55TDB

7164L55TDB

  • Description:IC SRAM 64KBIT PARALLEL 28CDIP
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tube

SKU:26970abda8c2 Category: Brand:

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Product Detailed Parameters

  • Description:IC SRAM 64KBIT PARALLEL 28CDIP
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tube
  • Memory Type:Volatile
  • Memory Format:SRAM
  • Technology:SRAM - Asynchronous
  • Memory Size:64Kbit
  • Memory Organization:8K x 8
  • Memory Interface:Parallel
  • Clock Frequency:-
  • Write Cycle Time - Word, Page:55ns
  • Voltage - Supply:4.5V ~ 5.5V
  • Operating Temperature:-55°C ~ 125°C (TA)
  • Mounting Type:Through Hole
  • Package / Case:28-CDIP (0.300", 7.62mm)
  • Supplier Device Package:28-CDIP
  • Access Time:55 ns

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7164L55TDB

Overview

The Renesas Electronics Corporation 7164L55TDB is a 64K-bit (8K x 8) asynchronous static random-access memory (SRAM) IC. It operates on a single 5.0V power supply with a voltage range of 4.5V to 5.5V. The device features a 55 ns access time and utilizes a parallel memory interface. It is housed in a 28-lead Ceramic Dual In-Line Package (CDIP) with a 0.300-inch (7.62mm) width, designed for through-hole mounting. This low-power variant includes a reduced power standby mode and supports battery backup data retention.

Feature Summary

  • Low-power architecture with reduced standby current consumption
  • Battery backup capability for data retention at low supply levels
  • Asynchronous parallel interface for straightforward integration

Applications

  • Industrial control systems requiring non-volatile-like data retention
  • Telecommunications equipment buffer memory
  • Embedded systems with limited power budgets

Procurement Notes

Verify component authenticity due to potential legacy status. Confirm package integrity as ceramic DIPs are sensitive to mechanical stress during handling. Ensure compatibility with existing 5V logic levels. Check for obsolescence notices or last-time buy notifications from the manufacturer. Validate environmental compliance documentation if required for specific regional regulations.

Selection Notes

Select this component when a 64K-bit SRAM with low standby power and battery backup support is required. The 55 ns speed suits moderate-speed asynchronous applications. The CDIP package is suitable for prototyping or high-reliability through-hole designs. Consider alternatives if surface-mount technology is mandatory or if higher access speeds are needed.

Part Context

This part belongs to the 7164 series of CMOS SRAMs. It shares architectural similarities with other variants like the 7164S35DB but differs in speed and package type. The 'L' suffix denotes the low-power version with battery backup features, distinguishing it from standard power versions within the same family.

Replacement Considerations

Direct substitutes include IDT7164L55TDB. Verify pinout and electrical specifications match exactly before substitution.

7164L55TDB7164L55TDB

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