7164L55TDB

Overview

The IDT7164L55TDB is a standard static random-access memory (SRAM) device organized as 8K words by 8 bits, providing a total memory density of 65,536 bits. It operates asynchronously with a maximum access time of 55 nanoseconds and utilizes CMOS technology for fabrication. The component supports a single power supply voltage range of 4.5V to 5.5V, with a rated voltage of 5V. It features TTL-compatible inputs and outputs and includes a low-power standby mode activated when the chip select signal is high. The L-version variant specifically offers battery backup data retention capability at supply levels as low as 2V.

Feature Summary

• CMOS technology implementation for high-speed asynchronous operation
• Low-power standby mode activation via chip select control
• Battery backup data retention capability in L-version variants
• TTL-compatible input and output logic levels

Applications

• Military-grade electronic systems requiring MIL-STD-883 Class B compliance
• High-speed address and data buffering applications
• Battery-backed volatile memory storage systems
• Industrial control units requiring wide temperature stability

Procurement Notes

Verify that the specific suffix 'TDB' corresponds to the intended package type and termination finish, as datasheets for the 7164 series list various packages including DIP and SOJ. Confirm RoHS compliance status, as older IDT SRAMs often utilize lead-based terminations. Ensure the procurement channel provides documentation verifying the military temperature grade (-55°C to +125°C) if required for the application environment.

Selection Notes

Select this component when an 8Kx8 organization is required with a 55ns access speed limit. The L-version designation indicates support for battery backup operations down to 2V, which is critical for non-volatile data preservation during power loss. Verify that the system interface matches the TTL-compatible logic levels and that the available pin count aligns with the 28-pin package options documented for this family.

Part Context

This part belongs to the IDT7164S/L family of 65,536-bit high-speed static RAMs fabricated using CMOS technology. The family offers various access times ranging from 15ns to 85ns and multiple package configurations. The 7164L55TDB represents the 55ns speed grade within the low-power (L) subset, designed for robust performance in demanding environments.

Replacement Considerations

Compatible substitutes include other 8Kx8 SRAMs with 55ns access times such as the IDT7164S55 or equivalent parts from other manufacturers offering identical pinouts and electrical characteristics. Verify that replacement parts support the same battery backup voltage requirements and military temperature ratings.