7164L70DB

7164L70DB

  • Description:IC SRAM 64KBIT PARALLEL 28CDIP
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tube

SKU:e2efda45eb59 Category: Brand:

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Product Detailed Parameters

  • Description:IC SRAM 64KBIT PARALLEL 28CDIP
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tube
  • Memory Type:Volatile
  • Memory Format:SRAM
  • Technology:SRAM - Asynchronous
  • Memory Size:64Kbit
  • Memory Organization:8K x 8
  • Memory Interface:Parallel
  • Clock Frequency:-
  • Write Cycle Time - Word, Page:70ns
  • Voltage - Supply:4.5V ~ 5.5V
  • Operating Temperature:-55°C ~ 125°C (TA)
  • Mounting Type:Through Hole
  • Package / Case:28-CDIP (0.600", 15.24mm)
  • Supplier Device Package:28-CDIP
  • Access Time:70 ns

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7164L70DB

Overview

The Renesas Electronics Corporation 7164L70DB is a static random access memory (SRAM) device with a storage capacity of 64 kbit, organized as 8k x 8. It features an asynchronous parallel interface and a typical access time of 70 ns. The component operates within a supply voltage range of 4.5 V to 5.5 V, with a maximum power consumption of 90 mA. Designed for through-hole mounting, it is housed in a CDIP-28 package. The device supports an extended industrial temperature range from -55°C to +125°C.

Feature Summary

  • Provides non-volatile data retention characteristics inherent to SRAM technology without requiring refresh cycles.
  • Supports high-speed asynchronous read and write operations via a standard parallel interface.
  • Engineered for reliable performance across extreme industrial temperature environments.

Applications

  • Industrial control systems requiring robust memory solutions
  • Embedded applications operating in harsh environmental conditions
  • Legacy system maintenance and replacement

Procurement Notes

Verify the specific suffix 'DB' against official documentation to confirm pinout and package details, as variations exist within the series. Confirm RoHS compliance status directly with the manufacturer or authorized distributors, as historical data indicates potential non-compliance for certain variants. Ensure availability aligns with end-of-life management strategies given the component's age.

Selection Notes

Select this component when a 64 kbit SRAM with a 70 ns access time is required for through-hole assembly. It is suitable for designs needing operation at voltages between 4.5 V and 5.5 V. Consider the CDIP-28 package constraints and the wide temperature range if the application involves industrial or automotive-grade reliability standards.

Part Context

This part belongs to the 7164L70 series of BICMOS static RAMs manufactured by Renesas Electronics. It is functionally similar to other parts in the family, such as the 7164L70TDB, differing primarily in packaging or minor electrical specifications. The series is characterized by its use in legacy digital systems requiring fast, volatile memory storage.

Replacement Considerations

IDT7164L70TDB is listed as an alias for this component. Verify pin compatibility and electrical parameters before substitution. Other members of the 7164L70 series may serve as alternatives if package differences are acceptable.

7164L70DB7164L70DB

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