7164S100DB

Memory IC Overview

The 7164S100DB is a 64K-bit (8K x 8) asynchronous static random-access memory (SRAM) manufactured by Renesas Electronics Corporation. It operates with a maximum access time of 100 ns and requires a single 5.0V power supply. The device utilizes BICMOS technology to provide high-speed data retention without the need for battery backup. It is housed in a 28-lead Ceramic Dual In-Line Package (CDIP), designed for robust performance in industrial and commercial applications requiring reliable volatile memory storage.

Memory IC Feature Summary

• Asynchronous parallel interface architecture for straightforward system integration
• BICMOS technology ensures stable operation without external battery support
• Single 5.0V voltage supply simplifies power management requirements
• Ceramic dual in-line package provides mechanical durability

Memory IC Applications

• Industrial control systems requiring non-volatile-like SRAM behavior
• Commercial equipment needing fast, battery-free data buffering
• Embedded systems utilizing asynchronous memory interfaces
• Test and measurement instrumentation data storage

Memory IC Procurement Notes

Verify component authenticity through authorized channels due to potential availability from secondary markets. Confirm RoHS compliance status as documentation may vary by production batch. Check for specific ordering suffixes that denote lead-free or environmental variations. Ensure the ceramic package integrity is intact upon receipt. Validate datasheet revisions against current engineering requirements before final procurement decisions.

Memory IC Selection Notes

Select this component when a 100 ns access time meets system timing constraints. Choose the CDIP package for applications requiring through-hole mounting or enhanced thermal/mechanical stability compared to plastic variants. Verify that the 5.0V logic level aligns with the host microcontroller or processor I/O specifications. Consider the 8K x 8 word size for adequate buffer capacity in the target design.

Memory IC Part Context

This part belongs to the 7164S35 series of asynchronous SRAMs. It shares architectural similarities with other members like the 7164S35DB but differs in access speed and operating voltage characteristics. The series represents Renesas's legacy BICMOS memory solutions, often serving as direct replacements for older industry-standard SRAM components in established hardware designs.

Memory IC Replacement Considerations

The IDT7164S35DB is listed as an alias for this component family. Verify pin compatibility and electrical parameters before substituting with other 64K SRAM devices. Ensure any replacement maintains the 28-lead CDIP form factor if board space is constrained.