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Product Detailed Parameters
- Description:IC SRAM 64KBIT PARALLEL 28DIP
- Series:-
- Mfr:Renesas Electronics Corporation
- Package:Tube
- Memory Type:Volatile
- Memory Format:SRAM
- Technology:SRAM - Asynchronous
- Memory Size:64Kbit
- Memory Organization:8K x 8
- Memory Interface:Parallel
- Clock Frequency:-
- Write Cycle Time - Word, Page:20ns
- Voltage - Supply:4.5V ~ 5.5V
- Operating Temperature:0°C ~ 70°C (TA)
- Mounting Type:Through Hole
- Package / Case:28-DIP (0.300", 7.62mm)
- Supplier Device Package:28-PDIP
- Access Time:20 ns
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Overview
The 7164S20TPG is a 64Kb (8K x 8) asynchronous static random-access memory (SRAM) integrated circuit manufactured by Renesas Electronics Corporation. It features a parallel interface with a maximum access time of 20 nanoseconds and a write cycle time of 20 nanoseconds. The device operates on a single 5V power supply within the range of 4.5V to 5.5V. It is housed in a 28-pin Small Outline J-Lead (SOJ) package designed for surface-mount installation. The component supports an industrial operating temperature range from -40°C to +85°C.
Feature Summary
- Asynchronous parallel SRAM architecture providing fast data access without clock synchronization requirements.
- Industrial-grade thermal stability supporting reliable operation across wide ambient temperature variations.
- Single 5V voltage supply compatibility simplifying integration into standard logic systems.
Applications
- Industrial control systems requiring robust memory storage under varying environmental conditions.
- Embedded applications utilizing parallel bus interfaces for data buffering or code execution.
- Automotive electronics components operating within extended temperature ranges.
Procurement Notes
Verify component authenticity through authorized distributors as this part may be subject to obsolescence notices. Confirm package integrity and pin alignment prior to assembly. Check for specific suffix variations that may indicate different temperature grades or packaging formats. Ensure compliance with relevant regulatory standards such as RoHS3 where applicable. Review official datasheets for handling precautions related to electrostatic discharge sensitivity.
Selection Notes
Select this component when a 64Kb capacity with 20ns speed is required in a surface-mount SOJ package. Consider the -40°C to +85°C temperature range suitability for industrial environments. Evaluate the single 5V supply requirement against system power constraints. Compare against other 7164 series variants if leaded DIP packages or commercial temperature ranges are acceptable alternatives.
Part Context
This part belongs to the 7164 family of high-speed CMOS static RAMs originally developed by IDT and now managed by Renesas Electronics. The 'S' designation typically indicates the SOJ package style, distinguishing it from the 'L' series which uses PDIP packages. These devices represent legacy asynchronous memory solutions widely used in established industrial and automotive designs before the prevalence of serial flash and embedded microcontroller memories.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Users should consult official Renesas lifecycle notices for potential end-of-life management options or recommended cross-references.
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