7164S25TDB

7164S25TDB

  • Description:IC SRAM 64KBIT PARALLEL 28CDIP
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tube

SKU:423b843baee1 Category: Brand:

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Product Detailed Parameters

  • Description:IC SRAM 64KBIT PARALLEL 28CDIP
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tube
  • Memory Type:Volatile
  • Memory Format:SRAM
  • Technology:SRAM - Asynchronous
  • Memory Size:64Kbit
  • Memory Organization:8K x 8
  • Memory Interface:Parallel
  • Clock Frequency:-
  • Write Cycle Time - Word, Page:25ns
  • Voltage - Supply:4.5V ~ 5.5V
  • Operating Temperature:-55°C ~ 125°C (TA)
  • Mounting Type:Through Hole
  • Package / Case:28-CDIP (0.300", 7.62mm)
  • Supplier Device Package:28-CDIP
  • Access Time:25 ns

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7164S25TDB

Overview

The Renesas Electronics Corporation 7164S25TDB is a static random-access memory (SRAM) integrated circuit organized as 8K x 8 bits, providing a total storage capacity of 64 kilobits. It utilizes asynchronous parallel interface technology with a maximum access time of 25 nanoseconds. The device operates within a supply voltage range of 4.5 volts to 5.5 volts and is housed in a 28-pin ceramic dual in-line package (CDIP).

Feature Summary

  • Asynchronous parallel SRAM architecture requiring no clock signals or refresh cycles for operation.
  • Low-power CMOS technology designed for reduced system power consumption and cooling requirements.
  • Direct TTL-compatible input and output logic levels for simplified interfacing.

Applications

  • Military-grade electronic systems requiring compliance with MIL-STD-883 Class B standards.
  • Industrial control applications utilizing battery backup data retention capabilities.
  • High-speed address and chip select timing environments.

Procurement Notes

Verify component authenticity through authorized channels due to obsolete status. Confirm specific suffix designations match required military or commercial temperature grades. Ensure packaging integrity for ceramic dual in-line packages during handling. Cross-reference datasheet revisions for any manufacturing site transfers or label changes documented in product change notices.

Selection Notes

Select this component when high-speed asynchronous memory is required alongside strict environmental durability standards. Consider the 25-nanosecond access speed for legacy system compatibility. Evaluate the ceramic package option for superior thermal stability compared to plastic variants. Verify that the 4.5V to 5.5V operating range aligns with existing system power rails.

Part Context

This part belongs to the 7164S series of static random-access memories manufactured by Renesas Electronics. The series offers various speed grades and package options to support diverse computing and industrial needs. The 7164S25 variant specifically targets applications demanding rapid data retrieval times within a standard 28-pin footprint.

Replacement Considerations

IDT7164S25TDB serves as a direct equivalent under the Integrated Device Technology branding prior to corporate acquisition.

7164S25TDB7164S25TDB

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