7164S25YG

Description：IC SRAM 64KBIT PARALLEL 28SOJ
Series：-
Mfr：Renesas Electronics Corporation
Package：Tube

SKU:9e07c8871f51 Category: Memory IC Brand: Renesas Electronics Corporation

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Product introduction

7164S25YG is listed in the Memory IC range at ChipApex. The manufacturer field lists Renesas Electronics Corporation. Its product description is IC SRAM 64KBIT PARALLEL 28SOJ. Review the specifications below when checking this part for your BOM.

Memory IC specifications for 7164S25YG

Description：IC SRAM 64KBIT PARALLEL 28SOJ
Series：-
Mfr：Renesas Electronics Corporation
Package：Tube
Memory Type：Volatile
Memory Format：SRAM
Technology：SRAM - Asynchronous
Memory Size：64Kbit
Memory Organization：8K x 8
Memory Interface：Parallel
Clock Frequency：-
Write Cycle Time - Word, Page：25ns
Voltage - Supply：4.5V ~ 5.5V
Operating Temperature：0°C ~ 70°C (TA)
Mounting Type：Surface Mount
Package / Case：28-BSOJ (0.300", 7.62mm Width)
Supplier Device Package：28-SOJ
Access Time：25 ns

Memory IC datasheet and documents for 7164S25YG

7164S25YG

Memory IC Overview

The Renesas Electronics Corporation 7164S25YG is a static random-access memory (SRAM) integrated circuit manufactured using BICMOS technology. It provides a storage capacity of 64 kbit, organized as 8k x 8 bits. The device features an asynchronous parallel interface with a maximum access time of 25 ns. It operates within a supply voltage range of 4.5 V to 5.5 V and has a maximum power supply current of 90 mA. The component is designed for surface-mount installation in a 28-pin SOJ package. It supports single data rate (SDR) operations and functions reliably within a commercial temperature range of 0°C to +70°C.

Memory IC Feature Summary

Asynchronous parallel SRAM architecture utilizing BICMOS technology
Single data rate (SDR) operation without clock or refresh requirements
Surface-mount 28-lead Small Outline J-Lead (SOJ) packaging

Memory IC Applications

General-purpose volatile data storage in electronic systems
Buffering applications requiring fast asynchronous access
Industrial control system memory modules

Memory IC Procurement Notes

Verify the specific manufacturing lot date code against project requirements due to the component's end-of-life status. Confirm that the 28-SOJ package dimensions match the target PCB footprint. Ensure that the 4.5V to 5.5V operating voltage aligns with the system power rails. Check for moisture sensitivity level compliance during handling and storage. Validate that the 25 ns access time meets the timing constraints of the host processor or controller.

Memory IC Selection Notes

Select this component when a 64 kbit asynchronous SRAM with a 25 ns access time is required in a 28-SOJ package. It is suitable for designs needing a 5V logic interface and commercial temperature performance. Consider the BICMOS process characteristics for drive strength and noise immunity. Evaluate the 90 mA active current consumption against system power budgets. Ensure compatibility with existing board layouts designed for the SOJ form factor.

Memory IC Part Context

The 7164S25YG belongs to the 7164S series of high-speed static RAMs produced by Renesas Electronics. This series typically offers various speed grades and package options to accommodate different design needs. The part represents a legacy product line often found in established industrial and communication equipment designs. Its BICMOS construction distinguishes it from purely CMOS alternatives in terms of power and speed characteristics.