7164S25YG

Overview

The Renesas Electronics Corporation 7164S25YG is a static random-access memory (SRAM) integrated circuit manufactured using BICMOS technology. It provides a storage capacity of 64 kbit, organized as 8k x 8 bits. The device features an asynchronous parallel interface with a maximum access time of 25 ns. It operates within a supply voltage range of 4.5 V to 5.5 V and has a maximum power supply current of 90 mA. The component is designed for surface-mount installation in a 28-pin SOJ package. It supports single data rate (SDR) operations and functions reliably within a commercial temperature range of 0°C to +70°C.

Feature Summary

• Asynchronous parallel SRAM architecture utilizing BICMOS technology
• Single data rate (SDR) operation without clock or refresh requirements
• Surface-mount 28-lead Small Outline J-Lead (SOJ) packaging

Applications

• General-purpose volatile data storage in electronic systems
• Buffering applications requiring fast asynchronous access
• Industrial control system memory modules

Procurement Notes

Verify the specific manufacturing lot date code against project requirements due to the component's end-of-life status. Confirm that the 28-SOJ package dimensions match the target PCB footprint. Ensure that the 4.5V to 5.5V operating voltage aligns with the system power rails. Check for moisture sensitivity level compliance during handling and storage. Validate that the 25 ns access time meets the timing constraints of the host processor or controller.

Selection Notes

Select this component when a 64 kbit asynchronous SRAM with a 25 ns access time is required in a 28-SOJ package. It is suitable for designs needing a 5V logic interface and commercial temperature performance. Consider the BICMOS process characteristics for drive strength and noise immunity. Evaluate the 90 mA active current consumption against system power budgets. Ensure compatibility with existing board layouts designed for the SOJ form factor.

Part Context

The 7164S25YG belongs to the 7164S series of high-speed static RAMs produced by Renesas Electronics. This series typically offers various speed grades and package options to accommodate different design needs. The part represents a legacy product line often found in established industrial and communication equipment designs. Its BICMOS construction distinguishes it from purely CMOS alternatives in terms of power and speed characteristics.

Replacement Considerations

IDT7164S25YG