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Product Detailed Parameters
- Description:IC SRAM 64KBIT PARALLEL 28CDIP
- Series:-
- Mfr:IDT, Integrated Device Technology Inc
- Package:Bulk
- Memory Type:Volatile
- Memory Format:SRAM
- Technology:SRAM - Asynchronous
- Memory Size:64Kbit
- Memory Organization:8K x 8
- Memory Interface:Parallel
- Clock Frequency:-
- Write Cycle Time - Word, Page:35ns
- Voltage - Supply:4.5V ~ 5.5V
- Operating Temperature:-55°C ~ 125°C (TA)
- Mounting Type:Through Hole
- Package / Case:28-CDIP (0.600", 15.24mm)
- Supplier Device Package:28-CDIP
- Access Time:35 ns
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Overview
The IDT7164S35DB is a high-speed static random-access memory (SRAM) device organized as 8K by 8 bits, providing a total storage capacity of 64 kilobits. Fabricated using CMOS technology, this component features an asynchronous parallel interface with a maximum access time of 35 nanoseconds. It operates within a standard voltage range of 4.5V to 5.5V and is housed in a 28-pin ceramic dual in-line package (CDIP). The device supports reduced power standby modes when specific control inputs are deactivated.
Feature Summary
- High-speed asynchronous data access utilizing advanced CMOS fabrication processes for reliable performance.
- Integrated low-power standby functionality activated by deactivating chip select or address inputs.
- Standard parallel interface architecture compatible with conventional microprocessor systems.
Applications
- Embedded memory storage in industrial control systems
- Data buffering in telecommunications equipment
- Cache memory implementation in embedded computing architectures
Procurement Notes
Verify current availability status as the component may be discontinued or subject to limited supply constraints. Confirm RoHS compliance requirements against project specifications, noting that this specific variant may not meet modern environmental standards. Validate package integrity upon receipt to ensure the ceramic housing remains undamaged during handling and installation procedures.
Selection Notes
Select this component when a 64Kbit SRAM with 35ns speed is required in a through-hole ceramic package. Ensure system voltage aligns with the 4.5V to 5.5V operating range. Consider alternative packages if surface-mount solutions are preferred, or verify compatibility with existing PCB footprints designed for 28-lead CDIP configurations.
Part Context
This part belongs to the IDT7164 series of high-speed static RAM devices. The series offers various speed grades and packaging options, including commercial and military temperature ranges. The 'S' designation typically indicates commercial grade performance, while the 'DB' suffix specifies the ceramic DIP package type within the broader product family.
Replacement Considerations
Cross-reference with IDT7164L35DB for potential pin-compatible alternatives. Verify electrical parameter equivalence before substitution. Check manufacturer documentation for official obsolescence notices and recommended replacement strategies.
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