7164S35TDB

Overview

The Renesas Electronics Corporation 7164S35TDB is a static random-access memory (SRAM) integrated circuit belonging to the 7164S35 series. It provides a storage capacity of 64 kilobits, organized as 8K words by 8 bits. The device utilizes BICMOS technology and features asynchronous parallel interface operation with a maximum access time of 35 nanoseconds. It operates within a supply voltage range of 4.5V to 5.5V and supports a commercial operating temperature range from 0°C to +70°C. The component is housed in a 28-lead Ceramic Dual In-Line Package (CDIP).

Feature Summary

• Asynchronous parallel SRAM architecture utilizing BICMOS technology for high-speed data processing.
• Integrated low-power standby mode designed to reduce system-level power consumption and cooling requirements.
• Direct TTL-compatible input and output logic levels for simplified interfacing with standard digital systems.

Applications

• High-speed data buffering in industrial control systems.
• Cache memory implementation in embedded computing architectures.
• Data storage in military-grade electronic equipment requiring radiation-hardened or robust packaging.

Procurement Notes

Verify component authenticity through authorized channels due to potential availability from secondary markets. Confirm package integrity upon receipt, as ceramic dual in-line packages require careful handling to prevent lead damage. Ensure compliance with specific project environmental standards, noting that this variant may not meet current RoHS directives. Validate datasheet revisions to confirm pinout consistency before finalizing board designs.

Selection Notes

Select this component when a ruggedized ceramic package is required for environments where plastic packages are unsuitable. The 35ns access speed balances performance with power efficiency for general-purpose memory applications. Consider the 28-pin CDIP footprint constraints during PCB layout. Evaluate total system power budgets against the standby current specifications provided in the official electrical characteristics table.

Part Context

This part belongs to the IDT 7164 family of 64K-bit SRAMs, originally developed by Integrated Device Technology and now manufactured under the Renesas Electronics brand. The 'T' suffix typically denotes a tape-and-reel or specific tube variation depending on the manufacturing era, while 'DB' indicates the ceramic DIP package. This series is widely recognized for its reliability in legacy and specialized industrial applications.

Replacement Considerations

Consult official Renesas documentation for direct pin-to-pin replacements. Verify that any substitute maintains the 35ns access time and 5V supply compatibility. Ensure the alternative component offers equivalent thermal stability for the intended operating environment.