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Product Detailed Parameters
- Description:IC SRAM 64KBIT PARALLEL 28DIP
- Series:-
- Mfr:Renesas Electronics Corporation
- Package:Tray
- Memory Type:Volatile
- Memory Format:SRAM
- Technology:SRAM - Asynchronous
- Memory Size:64Kbit
- Memory Organization:8K x 8
- Memory Interface:Parallel
- Clock Frequency:-
- Write Cycle Time - Word, Page:35ns
- Voltage - Supply:4.5V ~ 5.5V
- Operating Temperature:-40°C ~ 85°C (TA)
- Mounting Type:Through Hole
- Package / Case:28-DIP (0.300", 7.62mm)
- Supplier Device Package:28-PDIP
- Access Time:35 ns
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Overview
The IDT7164S35TPGI is a high-speed static random access memory component manufactured by Renesas Electronics. It features a storage capacity of 64 kilobits organized as 8K words by 8 bits. The device utilizes BICMOS technology to achieve an access time of 35 nanoseconds. It operates within a standard single 5-volt power supply range and supports asynchronous parallel interface operations. The component is housed in a 28-lead Plastic Dual In-Line Package (PDIP) suitable for through-hole mounting applications.
Feature Summary
- Employs BICMOS technology for high-speed asynchronous data processing
- Provides independent read and write control signals for flexible memory management
- Supports standard 5-volt logic levels for direct system integration
Applications
- Industrial control systems requiring reliable non-volatile-like temporary storage
- Telecommunications equipment buffer memory stages
- Embedded computing architectures needing fast local data caching
Procurement Notes
Verify the specific suffix TPGI against official Renesas documentation to confirm package type and temperature grade. Ensure compatibility with existing PCB footprints for 28-pin DIP configurations. Confirm end-of-life status and availability through authorized distributors prior to final design commitment.
Selection Notes
Select this component when a moderate density 64Kbit SRAM with 35ns speed is required. It serves as a suitable alternative for legacy designs utilizing older IDT or Cypress equivalents. Consider pinout compatibility and voltage requirements relative to the target microcontroller or processor bus architecture.
Part Context
This part belongs to the 7164S35 series of asynchronous SRAMs. The series offers various packaging options including SOJ, CDIP, and PDIP variants. These components are designed for general-purpose memory applications where fast random access is critical for system performance.
Replacement Considerations
Check for cross-reference parts such as IDT7164S35 or equivalent 64Kx8 SRAMs from other manufacturers. Verify electrical specifications and pin assignments before substitution.
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