7164S85DB

7164S85DB

  • Description:IC SRAM 64KBIT PARALLEL 28CDIP
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tube

SKU:8f46ba515077 Category: Brand:

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Product Detailed Parameters

  • Description:IC SRAM 64KBIT PARALLEL 28CDIP
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tube
  • Memory Type:Volatile
  • Memory Format:SRAM
  • Technology:SRAM - Asynchronous
  • Memory Size:64Kbit
  • Memory Organization:8K x 8
  • Memory Interface:Parallel
  • Clock Frequency:-
  • Write Cycle Time - Word, Page:85ns
  • Voltage - Supply:4.5V ~ 5.5V
  • Operating Temperature:-55°C ~ 125°C (TA)
  • Mounting Type:Through Hole
  • Package / Case:28-CDIP (0.600", 15.24mm)
  • Supplier Device Package:28-CDIP
  • Access Time:85 ns

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7164S85DB

Overview

The Renesas Electronics Corporation 7164S85DB is a static random-access memory (SRAM) integrated circuit manufactured using BICMOS technology. It provides a storage capacity of 64 kbit, organized as 8K words by 8 bits. The device features an asynchronous parallel interface with a maximum access time of 85 ns. It operates within a supply voltage range of 4.5 V to 5.5 V and supports a maximum power consumption of 100 mA. The component is designed for surface-mount installation in a CDIP-28 package and functions reliably across an industrial temperature range from -40°C to +85°C.

Feature Summary

  • Asynchronous parallel operation without requiring external clock signals or refresh cycles
  • BICMOS technology enabling high-speed data access and low standby power modes
  • TTL-compatible inputs and outputs for simplified system integration

Applications

  • Industrial control systems requiring reliable volatile memory
  • Embedded applications with strict temperature tolerance requirements
  • Data buffering in high-speed digital signal processing circuits

Procurement Notes

Verify the specific suffix DB indicates the CDIP-28 ceramic dual in-line package configuration. Confirm RoHS compliance status through official documentation as sources indicate non-compliance. Check for End-of-Life notices and Product Change Notifications regarding manufacturing transfers. Ensure compatibility with existing PCB footprints for 28-pin ceramic packages before procurement.

Selection Notes

Select this component when a ruggedized ceramic package is required for harsh environments. The 85 ns speed suits moderate-frequency asynchronous designs. Compare against plastic SOJ or DIP variants if cost or availability differs. Verify that the single 5V supply requirement aligns with the target system power rails. Consider moisture sensitivity levels during handling and storage procedures.

Part Context

This part belongs to the 7164 series of 64Kb SRAMs produced by Renesas Electronics. The series includes various speed grades and package options such as SOJ and PDIP. The 7164S85DB specifically denotes the slower 85 ns speed grade housed in a durable ceramic dual in-line package suitable for high-reliability applications.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material.

7164S85DB7164S85DB

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