71P74804S200BQG

71P74804S200BQG

$6.15
  • Description:IC SRAM 18MBIT PAR 165CABGA
  • Series:-
  • Mfr:IDT, Integrated Device Technology Inc
  • Package:Bulk

SKU:8f5c015445e1 Category: Brand:

  
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Product Detailed Parameters

  • Description:IC SRAM 18MBIT PAR 165CABGA
  • Series:-
  • Mfr:IDT, Integrated Device Technology Inc
  • Package:Bulk
  • Memory Type:Volatile
  • Memory Format:SRAM
  • Technology:SRAM - Synchronous, QDR II
  • Memory Size:18Mbit
  • Memory Organization:1M x 18
  • Memory Interface:Parallel
  • Clock Frequency:200 MHz
  • Write Cycle Time - Word, Page:-
  • Voltage - Supply:1.7V ~ 1.9V
  • Operating Temperature:0°C ~ 70°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:165-TBGA
  • Supplier Device Package:165-CABGA (13x15)
  • Access Time:8.4 ns

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71P74804S200BQG

Overview

The IDT71P74804S200BQG is a QDR II SRAM IC with an 18Mb capacity organized as 1M x 18. It operates at a clock frequency of 200 MHz with an access time of 8.4 ns. The device uses a 165-CABGA (13x15) package and requires a supply voltage between 1.7V and 1.9V. It supports parallel interface communication and functions within a temperature range of 0°C to 70°C.

Feature Summary

  • QDR II technology enables simultaneous read and write operations without dead cycles
  • Fully pipelined architecture for high-speed data processing
  • Parallel interface supporting simple depth expansion

Applications

  • High-performance networking equipment
  • Telecommunications infrastructure
  • Data acquisition systems

Procurement Notes

Verify component authenticity through authorized Renesas channels due to discontinued status. Confirm package integrity and pin alignment against the 165-CABGA specification. Check for RoHS compliance markers on original packaging. Validate lot codes against current PCN documentation to ensure material consistency. Request detailed test reports if used in safety-critical applications.

Selection Notes

Select this part when QDR II simultaneous I/O capability is required for 18Mb storage. Ensure system design accommodates the 1.7V to 1.9V power supply range. Verify that the 165-CABGA footprint fits the PCB layout constraints. Consider thermal management for operation up to 70°C ambient temperature. Compare against newer QDR III or IV generations for future-proofing needs.

Part Context

This component belongs to the IDT71P74 family of QDR II SRAMs manufactured by Integrated Device Technology, now part of Renesas Electronics. The family offers high-speed memory solutions designed for bandwidth-intensive applications. The 71P74804 variant specifically provides 18Mb density in a compact BGA package, distinguishing it from lower-density siblings like the 71P74604.

Replacement Considerations

Official substitutes include IDT71P74804S200BQGI for extended temperature ranges. Cross-reference with IDT71P74604 series for similar functionality with different densities. Verify pin compatibility before replacing with newer QDR generations.

71P74804S200BQG71P74804S200BQG
$6.15
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