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Product Detailed Parameters
- Description:IC SRAM 18MBIT PARALLEL 119PBGA
- Series:-
- Mfr:IDT, Integrated Device Technology Inc
- Package:Bulk
- Memory Type:Volatile
- Memory Format:SRAM
- Technology:SRAM - Synchronous, SDR (ZBT)
- Memory Size:18Mbit
- Memory Organization:512K x 36
- Memory Interface:Parallel
- Clock Frequency:100 MHz
- Write Cycle Time - Word, Page:-
- Voltage - Supply:2.375V ~ 2.625V
- Operating Temperature:0°C ~ 70°C (TA)
- Mounting Type:Surface Mount
- Package / Case:119-BGA
- Supplier Device Package:119-PBGA (14x22)
- Access Time:5 ns
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Overview
The IDT71T75602S100BG is a synchronous ZBT SRAM IC with an 18Mb capacity organized as 512K x 36. It operates at a clock frequency of 100 MHz with a 5 ns access time. The device uses a parallel interface and requires a supply voltage between 2.375V and 2.625V. It is housed in a 119-PBGA package measuring 14x22 mm and supports surface mount installation. The component functions within a temperature range of -40°C to 85°C.
Feature Summary
- Supports high-performance system speeds through synchronous operation without dead cycles between read and write operations.
- Features internally synchronized output buffer enable, eliminating the need for external control of the output enable signal.
- Utilizes a single R/W control pin and positive clock-edge triggered registers for fully pipelined applications.
Applications
- High-speed data buffering in telecommunications equipment
- Cache memory systems in network routers and switches
- Digital signal processing applications requiring low-latency access
Procurement Notes
Verify RoHS compliance status carefully, as documentation indicates variations across manufacturing dates and specific suffixes. Confirm the exact package type and lead finish upon ordering, as legacy inventory may differ from current production runs. Check for active Product Change Notifications regarding labeling or material composition updates before finalizing procurement contracts.
Selection Notes
Select this component when a 36-bit wide data path is required for synchronous memory applications. Ensure the design accommodates the 2.5V core voltage and compatible I/O levels. Verify that the 119-ball BGA footprint fits the PCB layout constraints and thermal management requirements for the specified operating temperature range.
Part Context
This part belongs to the IDT 71T75602 family of Synchronous Zero Bus Turnaround SRAMs. These devices are designed to eliminate bus turnaround delays, improving throughput in high-speed digital systems. The family includes various speed grades and package options to support diverse embedded memory needs in industrial and commercial electronics.
Replacement Considerations
Consult official Renesas Electronics substitution guides for verified equivalents. Cross-reference speed grades and package dimensions to ensure mechanical compatibility. Verify electrical parameter alignment, particularly voltage ranges and timing specifications, before replacing the original component.
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