71T75602S100BG8

Overview

The Renesas Electronics Corporation 71T75602S100BG8 is a synchronous single data rate zero bus turnaround static random-access memory integrated circuit. It provides an 18-megabit storage capacity organized as 512K words by 36 bits. The device operates with a maximum clock frequency of 100 MHz and features a typical access time of 5 nanoseconds. It utilizes a parallel interface and requires a supply voltage ranging from 2.375 volts to 2.625 volts. The component is housed in a 119-pin plastic ball grid array package measuring 14 by 22 millimeters.

Feature Summary

• Supports high-speed synchronous data transfer via a parallel interface architecture.
• Utilizes zero bus turnaround technology to optimize bandwidth efficiency during read-to-write transitions.
• Designed for operation within standard industrial temperature ranges.

Applications

• High-performance networking equipment requiring fast buffer memory
• Telecommunications infrastructure systems
• Industrial control systems demanding reliable volatile storage

Procurement Notes

Verify the specific suffix designation against official manufacturer documentation, as packaging variations exist within this product family. Confirm current lifecycle status, as many variants in this series have reached end-of-life. Ensure compatibility with existing board layouts regarding the 119-pin BGA footprint and thermal requirements before procurement.

Selection Notes

Select this component when a 36-bit wide data path is required for system integration. Compare performance metrics against other members of the 71T75602 series if different speed grades or package types are needed. Verify that the 2.5-volt core voltage aligns with the target system power rails and signal levels.

Part Context

This part belongs to the IDT 71T75602 series of synchronous SRAMs manufactured by Renesas Electronics. The series offers various speed grades and package options to support diverse embedded memory applications. The 100MHz variant represents a balanced performance tier within the broader portfolio of high-density memory solutions.

Replacement Considerations

Consult official datasheets for cross-reference information. Potential substitutes include other variants within the 71T75602 series with compatible pinouts and electrical characteristics. Verify functional equivalence before replacing obsolete components.