71T75602S100BGG8

Memory IC Overview

The Renesas 71T75602S100BGG8 is a synchronous static random-access memory (SRAM) integrated circuit belonging to the 71T75602 series. It provides an 18 Mbit storage capacity organized as 512K words by 36 bits. The device utilizes a parallel interface with Zero Bus Turnaround (ZBT) technology and operates at a maximum clock frequency of 100 MHz, achieving a typical access time of 5 ns. It functions within a supply voltage range of 2.375 V to 2.625 V and supports an industrial operating temperature range from -40°C to +85°C. The component is housed in a 119-pin Plastic Ball Grid Array (PBGA) package measuring 14x22 mm.

Memory IC Feature Summary

• Supports high-speed data transfer via a parallel interface synchronized with a single clock signal.
• Utilizes Zero Bus Turnaround (ZBT) architecture to eliminate wait states during bus turnaround cycles.
• Provides non-volatile data retention capabilities inherent to SRAM technology for rapid read/write operations.

Memory IC Applications

• High-performance embedded systems requiring fast local memory buffering
• Network infrastructure equipment utilizing parallel data processing
• Industrial control units demanding wide data word widths

Memory IC Procurement Notes

Verify the exact suffix against official Renesas documentation, as standard listings often use BGGI or BGI. Confirm RoHS compliance status, as older batches may differ. Check for End-of-Life notices, as this part number family has faced discontinuation announcements. Ensure the specific thermal grade matches your environmental requirements before finalizing procurement.

Memory IC Selection Notes

Select this component when a 36-bit data width is required for system compatibility. The 100 MHz speed class offers a balance between performance and power consumption compared to higher-frequency variants. Ensure the PCB layout accommodates the 119-PBGA footprint and that the power supply rails are stable within the specified 2.375V to 2.625V window to maintain signal integrity.

Memory IC Part Context

This device is part of the IDT/Renesas 71T75602 family of synchronous ZBT SRAMs. These components were originally developed by Integrated Device Technology before its acquisition by Renesas Electronics. The family is designed for applications needing large, fast memory blocks with wide data paths, serving as a drop-in replacement for many asynchronous SRAMs in high-throughput designs.

Memory IC Replacement Considerations

Direct pin-to-pin replacements include the 71T75602S100BGI and 71T75602S100BGGI. Verify if the '8' suffix indicates a specific tape-and-reel variant or packaging change. Higher speed grades like the S133 or S166 variants may require voltage adjustments but offer faster access times.