71T75602S100BGI8

71T75602S100BGI8

  • Description:IC SRAM 18MBIT PAR 119PBGA
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tape & Reel (TR)

SKU:5de71a38d690 Category: Brand:

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Product Detailed Parameters

  • Description:IC SRAM 18MBIT PAR 119PBGA
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tape & Reel (TR)
  • Memory Type:Volatile
  • Memory Format:SRAM
  • Technology:SRAM - Synchronous, SDR (ZBT)
  • Memory Size:18Mbit
  • Memory Organization:512K x 36
  • Memory Interface:Parallel
  • Clock Frequency:100 MHz
  • Write Cycle Time - Word, Page:-
  • Voltage - Supply:2.375V ~ 2.625V
  • Operating Temperature:-40°C ~ 85°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:119-BGA
  • Supplier Device Package:119-PBGA (14x22)
  • Access Time:5 ns
  • Grade:-
  • Qualification:-

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71T75602S100BGI8

Overview

The Renesas 71T75602S100BGI8 is a synchronous static random-access memory (SRAM) integrated circuit featuring Zero Bus Turnaround (ZBT) technology. It provides an 18Mb storage capacity organized as 512K words by 36 bits. The device operates with a maximum clock frequency of 100 MHz and achieves a typical access time of 5 ns. It utilizes a parallel interface and requires a supply voltage range between 2.375V and 2.625V. The component is housed in a 119-pin Plastic Ball Grid Array (PBGA) package measuring 14x22 mm, designed for surface-mount installation.

Feature Summary

  • Supports high-speed data transfer via Zero Bus Turnaround (ZBT) architecture to minimize bus turnaround latency.
  • Integrates Single Data Rate (SDR) synchronous operation synchronized with the system clock.
  • Provides wide 36-bit data word organization suitable for processor cache and buffer applications.

Applications

  • Processor cache memory systems
  • High-performance network equipment buffers
  • Industrial control system data storage

Procurement Notes

Verify the specific suffix 'I8' against official Renesas documentation to confirm lead-free status and moisture sensitivity level. Confirm RoHS compliance status as some variants may differ. Check for product discontinuation notices or end-of-life notifications prior to procurement planning.

Selection Notes

Select this component when a 36-bit wide synchronous SRAM interface is required. Ensure the design supports the 2.5V core voltage domain. Verify that the PCB layout accommodates the 119-PBGA footprint and thermal requirements for the -40°C to 85°C operating range.

Part Context

This part belongs to the Renesas 71T75602 series of ZBT SRAM devices. The series offers various speed grades and packaging options. The 100 MHz variant balances performance and power consumption for mid-range synchronous memory applications requiring wide data paths.

Replacement Considerations

Consult official Renesas cross-reference guides for verified substitutes. Consider other speed grades within the 71T75602 family if timing constraints allow. Verify pin compatibility before substituting with similar packages from other manufacturers.

71T75602S100BGI871T75602S100BGI8

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