71T75602S133BG

Overview

The Renesas Electronics Corporation 71T75602S133BG is a synchronous Single Data Rate Zero Bus Turnaround (ZBT) Static Random Access Memory (SRAM) integrated circuit. It features an 18 Mbit storage capacity organized as 512K x 36 bits. The device supports a maximum clock frequency of 133 MHz with a typical access time of 4.2 ns. It operates on a core voltage supply ranging from 2.375 V to 2.625 V and utilizes a parallel interface. The component is housed in a 119-pin Plastic Ball Grid Array (PBGA) package measuring 14x22 mm.

Feature Summary

• Zero Bus Turnaround architecture eliminates dead cycles between read and write operations for improved throughput.
• Internally synchronized output buffer enable removes the requirement for external Output Enable control signals.
• Positive clock-edge triggered registers for address, data, and control signals support fully pipelined applications.
• Provides four-word burst capability in either interleaved or linear modes.

Applications

• High-performance processor secondary cache systems
• Network routing and switching equipment buffers
• Telecommunications base station signal processing
• Industrial automation controller memory

Procurement Notes

Verify the specific suffix against official documentation, as variations such as 'I' or 'G8' indicate distinct temperature grades or packaging formats. Confirm RoHS compliance status, as certain variants may not meet current environmental standards. Check for End-of-Life notices or Product Change Notifications regarding label changes or sourcing updates before finalizing procurement plans.

Selection Notes

Select this component when system requirements demand high-speed synchronous memory with zero wait states during bus turnaround. Ensure the design accommodates the 119-pin PBGA footprint and thermal dissipation needs. Verify that the 2.5V core voltage aligns with the system power rails and that the 133 MHz speed grade meets the target application's timing constraints.

Part Context

This part belongs to the 71T75602 series of ZBT SRAMs, designed to replace traditional asynchronous memories in high-speed digital systems. The series offers various speed grades and package options, including TQFP and BGA configurations, to suit different board space and performance requirements within the Renesas memory portfolio.

Replacement Considerations

Consult official datasheets for pin-compatible alternatives within the same family. Verify if speed-grade variants like the 166 MHz version are suitable for backward compatibility. No direct public substitute part numbers are confirmed for this specific configuration.