71T75602S133BG8

Description：IC SRAM 18MBIT PARALLEL 119PBGA
Series：-
Mfr：Renesas Electronics Corporation
Package：Tape & Reel (TR)

SKU:e8b86175ea1d Category: Memory IC Brand: Renesas Electronics Corporation

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Product introduction

Product Detailed Parameters

Description：IC SRAM 18MBIT PARALLEL 119PBGA
Series：-
Mfr：Renesas Electronics Corporation
Package：Tape & Reel (TR)
Memory Type：Volatile
Memory Format：SRAM
Technology：SRAM - Synchronous, SDR (ZBT)
Memory Size：18Mbit
Memory Organization：512K x 36
Memory Interface：Parallel
Clock Frequency：133 MHz
Write Cycle Time - Word, Page：-
Voltage - Supply：2.375V ~ 2.625V
Operating Temperature：0°C ~ 70°C (TA)
Mounting Type：Surface Mount
Package / Case：119-BGA
Supplier Device Package：119-PBGA (14x22)
Access Time：4.2 ns
Grade：-
Qualification：-

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71T75602S133BG8

Overview

The Renesas Electronics Corporation 71T75602S133BG8 is a synchronous static random access memory (SRAM) integrated circuit with an 18 Mbit storage capacity. It features a parallel interface and operates at a maximum clock frequency of 133 MHz with a 4.2 ns access time. The device utilizes a 2.5V core voltage, supported by a supply range of 2.375V to 2.625V. It is housed in a 119-pin PBGA package measuring 14x22 mm.

Feature Summary

Supports high-speed data transfer via a 133 MHz synchronous parallel interface.
Utilizes Zero Bus Turnaround (ZBT) technology for efficient bus utilization.
Operates on a dedicated 2.5V core voltage supply.

Applications

High-performance networking equipment
Telecommunications infrastructure systems
Industrial control applications

Procurement Notes

Verify component authenticity through authorized channels due to end-of-life status. Confirm RoHS compliance requirements as the part may not meet current environmental standards. Validate package integrity upon receipt to ensure suitability for surface mount assembly processes.

Selection Notes

Select this component for designs requiring fast synchronous memory with a 36-bit data width. Ensure the system supports the specific 2.5V core voltage requirement. Verify that the PCB layout accommodates the 119-pin PBGA footprint and thermal constraints associated with the specified power consumption levels.

Part Context

This SRAM belongs to the 71T75602 series, designed for demanding digital signal processing tasks. It offers a balance of speed and density suitable for buffer and cache applications in embedded systems. The device represents a specialized solution within Renesas's broader memory portfolio.

Replacement Considerations

Consult official documentation for verified substitute part numbers. Cross-reference pinouts and electrical specifications carefully before implementing any alternative components to maintain system compatibility.