71T75602S133BGG

71T75602S133BGG

  • Description:IC SRAM 18MBIT PARALLEL 119PBGA
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tray

SKU:d010b2086992 Category: Brand:

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Product Detailed Parameters

  • Description:IC SRAM 18MBIT PARALLEL 119PBGA
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tray
  • Memory Type:Volatile
  • Memory Format:SRAM
  • Technology:SRAM - Synchronous, SDR (ZBT)
  • Memory Size:18Mbit
  • Memory Organization:512K x 36
  • Memory Interface:Parallel
  • Clock Frequency:133 MHz
  • Write Cycle Time - Word, Page:-
  • Voltage - Supply:2.375V ~ 2.625V
  • Operating Temperature:0°C ~ 70°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:119-BGA
  • Supplier Device Package:119-PBGA (14x22)
  • Access Time:4.2 ns
  • Grade:-
  • Qualification:-

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71T75602S133BGG

Overview

The Renesas Electronics Corporation 71T75602S133BGG is a synchronous single data rate (SDR) static random-access memory (SRAM) integrated circuit. It provides an 18 Mbit storage capacity organized as 512K words by 36 bits. The device operates with a maximum clock frequency of 133 MHz and features a typical access time of 4.2 ns. It utilizes a parallel interface and requires a supply voltage range between 2.375 V and 2.625 V. The component is housed in a 119-pin plastic ball grid array (PBGA) package measuring 14x22 mm. It supports surface mount installation and functions within an ambient temperature range of -40°C to +85°C.

Feature Summary

  • Supports high-speed synchronous data transfer via a parallel interface for efficient system integration.
  • Provides large data width organization suitable for processor cache or buffer applications requiring wide data paths.
  • Operates reliably across extended industrial temperature ranges for robust performance in demanding environments.

Applications

  • High-performance computing systems requiring fast data buffering
  • Network infrastructure equipment needing low-latency memory
  • Industrial control systems operating in extreme temperatures

Procurement Notes

Verify the exact suffix against official Renesas documentation, as distribution listings may vary. Confirm RoHS compliance status and moisture sensitivity level prior to ordering. Check for end-of-life notices or product change notifications that may affect long-term availability. Ensure the specific package variant matches your PCB footprint requirements.

Selection Notes

Select this component when a wide 36-bit data path is required alongside high clock speeds. Compare access times and power consumption against alternative SRAM families. Ensure the PBGA package dimensions fit the designated board space. Verify voltage compatibility with the target system's power rails before finalizing the design.

Part Context

This part belongs to the 71T75602 series of synchronous SRAMs from Renesas. The series offers various speed grades and package options to suit different performance needs. The 133 MHz variant represents a high-speed option within the family, balancing capacity and latency for advanced embedded applications.

Replacement Considerations

Consult official Renesas substitution guides for verified alternatives. Cross-reference pinouts and electrical characteristics carefully. Generic equivalents may not match the specific timing or voltage requirements.

71T75602S133BGG71T75602S133BGG

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