71T75602S133BGG8

71T75602S133BGG8

  • Description:IC SRAM 18MBIT PARALLEL 119PBGA
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tape & Reel (TR)

SKU:73fab8a863d9 Category: Brand:

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Product Detailed Parameters

  • Description:IC SRAM 18MBIT PARALLEL 119PBGA
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tape & Reel (TR)
  • Memory Type:Volatile
  • Memory Format:SRAM
  • Technology:SRAM - Synchronous, SDR (ZBT)
  • Memory Size:18Mbit
  • Memory Organization:512K x 36
  • Memory Interface:Parallel
  • Clock Frequency:133 MHz
  • Write Cycle Time - Word, Page:-
  • Voltage - Supply:2.375V ~ 2.625V
  • Operating Temperature:0°C ~ 70°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:119-BGA
  • Supplier Device Package:119-PBGA (14x22)
  • Access Time:4.2 ns
  • Grade:-
  • Qualification:-

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71T75602S133BGG8

Overview

The 71T75602S133BGG8 is a synchronous static random-access memory (SRAM) integrated circuit manufactured by Renesas Electronics. It provides an 18 Mbit storage capacity organized as 512 k x 36 bits. The device supports a maximum clock frequency of 133 MHz with a typical access time of 4.2 ns. It operates within a voltage range of 2.375 V to 2.625 V and features a parallel interface. The component is housed in a 119-pin PBGA package measuring 14x22 mm, designed for surface-mount installation.

Feature Summary

  • Supports high-speed data transfer via a 133 MHz synchronous parallel interface
  • Provides 18 Mbit density through a 512 k x 36 bit organization structure
  • Operates on a single 2.5V core power supply
  • Delivers fast 4.2 ns access times for low-latency processing

Applications

  • High-performance networking equipment requiring large buffer memories
  • Telecommunications systems utilizing wide data buses
  • Industrial control systems needing rapid data caching
  • Embedded computing platforms with parallel memory interfaces

Procurement Notes

Verify the specific suffix BGG8 against official Renesas documentation to confirm the exact package type and moisture sensitivity level. Confirm RoHS compliance status as some variants may not meet current environmental standards. Check for active obsolescence notices or product change notifications that may affect long-term availability and manufacturing continuity.

Selection Notes

Select this component when a wide 36-bit data bus is required for system architecture compatibility. Ensure the design accommodates the 119-pin PBGA footprint and thermal requirements. Verify that the operating voltage range aligns with the system's power delivery network. Consider the synchronous nature of the interface for timing constraints in the PCB layout.

Part Context

This part belongs to the 71T75602 series of synchronous SRAMs from Renesas. The series offers various speed grades and packaging options to suit different performance needs. The 133 MHz variant balances speed and power consumption for mid-range applications. It serves as a critical memory solution for systems demanding high bandwidth and reliability.

Replacement Considerations

Consult official Renesas substitution guides for compatible alternatives. Cross-reference pinouts and electrical characteristics before replacing. Verify that any substitute maintains the 36-bit width and synchronous operation mode.

71T75602S133BGG871T75602S133BGG8

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