71T75602S133BGGI

Overview

The IDT71T75602S133BGGI is a 18Mbit Synchronous Zero Bus Turnaround (ZBT) SRAM with a memory organization of 512K x 36. It operates at a maximum clock frequency of 133 MHz, providing a 4.2 ns access time. The device utilizes a 119-pin PBGA package measuring 14x22 mm with a 1.27 mm ball pitch. It supports a core supply voltage range of 2.375 V to 2.625 V and features 2.5V I/O levels. The component is designed for surface mount assembly and functions within an operating temperature range of -40°C to +85°C.

Feature Summary

• Supports high-performance system speeds through synchronous ZBT architecture that eliminates dead cycles between write and read operations.
• Features internally synchronized output buffer enable to remove the need for external OE control signals.
• Includes individual byte write control capabilities for precise data management.
• Utilizes positive clock-edge triggered registers for address, data, and control signals to support fully pipelined applications.

Applications

• High-speed networking equipment requiring low-latency data buffering
• Telecommunications systems utilizing synchronous memory interfaces
• Industrial automation controllers needing reliable volatile storage

Procurement Notes

Verify the specific suffix BGGI confirms the 119-pin PBGA package and 133 MHz speed grade. Confirm RoHS3 compliance status as manufacturing processes may evolve. Check for End-of-Life notices or Production Change Notices regarding obsolescence. Ensure the supplier provides traceability documentation for the Renesas Electronics or IDT origin. Validate moisture sensitivity level handling requirements during procurement and storage.

Selection Notes

Select this component when a 512K x 36 configuration is required for synchronous burst operations. Choose this part over asynchronous alternatives for systems demanding predictable timing without wait states. Consider the 119-pin PBGA form factor for space-constrained PCB layouts. Verify that the 2.5V I/O compatibility matches the host processor interface standards. Evaluate the thermal performance within the specified industrial temperature range.

Part Context

This device belongs to the IDT 71T75602/802 family of Synchronous ZBT SRAMs. The family includes variants with different speeds and organizations, such as the 1M x 18 configuration. These components are manufactured by Integrated Device Technology, now part of Renesas Electronics Corporation. The technology focuses on high-density, high-speed memory solutions for complex digital systems.

Replacement Considerations

Direct substitutes include other 71T75602 variants with compatible pinouts and electrical characteristics. Verify that any replacement maintains the 119-pin PBGA package dimensions. Ensure the substitute supports the same 2.5V core and I/O voltage specifications. Check for equivalent access times to maintain system timing integrity.

FAQ

How does the ZBT feature improve performance compared to standard synchronous SRAM?

ZBT technology eliminates dead cycles between write and read operations, allowing for higher throughput and more efficient bus utilization in high-speed applications.

What is the function of the ZZ input pin?

The ZZ input controls the power-down mode of the device, allowing for reduced power consumption when the memory is not actively being accessed.