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Product Detailed Parameters
- Description:IC SRAM 18MBIT PARALLEL 119PBGA
- Series:-
- Mfr:Renesas Electronics Corporation
- Package:Tape & Reel (TR)
- Memory Type:Volatile
- Memory Format:SRAM
- Technology:SRAM - Synchronous, SDR (ZBT)
- Memory Size:18Mbit
- Memory Organization:512K x 36
- Memory Interface:Parallel
- Clock Frequency:133 MHz
- Write Cycle Time - Word, Page:-
- Voltage - Supply:2.375V ~ 2.625V
- Operating Temperature:-40°C ~ 85°C (TA)
- Mounting Type:Surface Mount
- Package / Case:119-BGA
- Supplier Device Package:119-PBGA (14x22)
- Access Time:4.2 ns
- Grade:-
- Qualification:-
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Overview
The Renesas Electronics Corporation 71T75602S133BGGI8 is a synchronous single data rate (SDR) static random-access memory (SRAM) integrated circuit. It provides an 18 Mbit storage capacity organized as 512 k words by 36 bits. The device operates with a maximum clock frequency of 133 MHz and features a 4.2 ns access time. It utilizes a parallel interface and functions within a supply voltage range of 2.375 V to 2.625 V, with a maximum power consumption of 215 mA. The component is housed in a 119-pin plastic ball grid array (PBGA) package measuring 14x22 mm. It supports surface mount installation and operates across a temperature range of -40°C to +85°C.
Feature Summary
- Supports high-speed synchronous data transfer via a parallel interface architecture
- Integrates wide data bus width for efficient multi-bit data handling
- Operates on a low-voltage core power supply for reduced energy consumption
Applications
- High-performance computing systems requiring fast memory access
- Network infrastructure equipment utilizing wide data buses
- Industrial control systems operating in extended temperature ranges
Procurement Notes
Verify the specific suffix BGGI8 against official Renesas documentation to confirm package type and environmental compliance status. Confirm availability through authorized channels as distribution may be limited. Ensure compatibility with existing board designs regarding pinout and thermal requirements before procurement.
Selection Notes
Select this component when a 36-bit wide data path is required for system integration. Consider the PBGA-119 footprint for PCB layout constraints. Evaluate the 133 MHz speed grade against system timing requirements. Compare power dissipation characteristics with alternative memory solutions for thermal management planning.
Part Context
This part belongs to the 71T75602S series of synchronous SRAM devices from Renesas. The series offers various speed grades and packaging options to suit different performance needs. The 133 variant balances speed and power efficiency for general-purpose high-density memory applications.
Replacement Considerations
Check for IDT71T75602S133BGGI8 as a potential equivalent designation. Verify pin compatibility and electrical specifications with any proposed substitute components.
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