71T75602S133BGI8

71T75602S133BGI8

  • Description:IC SRAM 18MBIT PARALLEL 119PBGA
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tape & Reel (TR)

SKU:df4d36f63dd1 Category: Brand:

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Product Detailed Parameters

  • Description:IC SRAM 18MBIT PARALLEL 119PBGA
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tape & Reel (TR)
  • Memory Type:Volatile
  • Memory Format:SRAM
  • Technology:SRAM - Synchronous, SDR (ZBT)
  • Memory Size:18Mbit
  • Memory Organization:512K x 36
  • Memory Interface:Parallel
  • Clock Frequency:133 MHz
  • Write Cycle Time - Word, Page:-
  • Voltage - Supply:2.375V ~ 2.625V
  • Operating Temperature:-40°C ~ 85°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:119-BGA
  • Supplier Device Package:119-PBGA (14x22)
  • Access Time:4.2 ns
  • Grade:-
  • Qualification:-

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71T75602S133BGI8

Overview

The Renesas Electronics Corporation 71T75602S133BGI8 is a synchronous static random-access memory (SRAM) integrated circuit featuring an 18 Mbit storage capacity organized as 512 k x 36. It operates with a maximum clock frequency of 133 MHz and offers a typical access time of 4.2 ns. The device utilizes a parallel interface and functions within a core voltage range of 2.375 V to 2.625 V, with a maximum power supply current of 215 mA. It is housed in a PBGA-119 surface-mount package and supports single data rate (SDR) operations.

Feature Summary

  • Supports high-speed synchronous data transfer via a parallel interface architecture
  • Provides wide 36-bit data word organization for efficient system integration
  • Operates on a dedicated low-voltage core power supply domain

Applications

  • High-performance networking equipment requiring fast buffer memory
  • Telecommunications infrastructure systems
  • Industrial control applications needing rapid data caching

Procurement Notes

Verify component authenticity through authorized channels due to end-of-life status. Confirm RoHS compliance requirements as the specific listing indicates non-compliance. Validate package integrity upon receipt, ensuring no damage to the PBGA-119 substrate. Check moisture sensitivity level handling procedures before soldering to prevent internal delamination during reflow processes.

Selection Notes

Select this component when a 36-bit wide synchronous SRAM interface is required for system compatibility. Ensure the design accommodates the 2.5V core voltage specification rather than standard I/O levels. Consider the PBGA-119 footprint constraints and thermal dissipation capabilities during PCB layout planning for reliable long-term operation.

Part Context

This part belongs to the 71T75602S133 series of synchronous SRAM devices manufactured by Renesas Electronics. It shares architectural similarities with other variants in the family but is distinguished by its specific 133 MHz speed grade and PBGA-119 packaging configuration. The series targets applications demanding high bandwidth and low latency memory solutions.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Verify pin-to-pin compatibility with alternative vendors if sourcing from secondary markets, noting potential differences in electrical characteristics or package tolerances.

71T75602S133BGI871T75602S133BGI8

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