— IC芯片 | 连接器 | 传感器 | 被动器件 —
Product Detailed Parameters
- Description:IC SRAM 18MBIT PARALLEL 100TQFP
- Series:-
- Mfr:Renesas Electronics Corporation
- Package:Tray
- Memory Type:Volatile
- Memory Format:SRAM
- Technology:SRAM - Synchronous, SDR (ZBT)
- Memory Size:18Mbit
- Memory Organization:512K x 36
- Memory Interface:Parallel
- Clock Frequency:133 MHz
- Write Cycle Time - Word, Page:-
- Voltage - Supply:2.375V ~ 2.625V
- Operating Temperature:-40°C ~ 85°C (TA)
- Mounting Type:Surface Mount
- Package / Case:100-LQFP
- Supplier Device Package:100-TQFP (14x14)
- Access Time:4.2 ns
- Grade:-
- Qualification:-
Download product information
Overview
The 71T75602S133PFGI is a synchronous single data rate static random access memory (SRAM) manufactured by Renesas Electronics. It features an 18 Mbit storage capacity organized as 512 k x 36 bits. The device supports a maximum clock frequency of 133 MHz with a 4.2 ns access time. It operates on a 2.5V core voltage, with supply voltage ranging from 2.375 V to 2.625 V and a maximum power current of 215 mA. The component utilizes a parallel interface and is housed in a 100-TQFP surface-mount package. It functions within a temperature range of -40°C to +85°C.
Feature Summary
- Provides high-speed synchronous data transfer capabilities via a parallel interface for efficient system integration.
- Delivers fast memory access performance suitable for demanding processing applications requiring low latency.
- Supports wide data bus architecture to accommodate complex data handling requirements.
Applications
- High-performance computing systems requiring rapid data retrieval
- Network infrastructure equipment utilizing parallel memory interfaces
- Industrial control systems operating in extended temperature environments
Procurement Notes
Verify component authenticity through authorized channels due to end-of-life status. Confirm RoHS compliance details and moisture sensitivity level prior to assembly. Ensure proper handling procedures are followed given the humidity-sensitive designation. Validate pin compatibility and electrical specifications against existing design requirements before procurement.
Selection Notes
Select this component when a 512k x 36 organization is required for specific data width applications. Consider the 133 MHz speed grade and 4.2 ns access time for timing constraints. Evaluate the 100-TQFP package dimensions for board space limitations. Assess thermal management needs based on the specified power consumption characteristics.
Part Context
This part belongs to the 71T75602S133 series of synchronous SRAM devices. It represents a specific variant within Renesas' memory portfolio designed for parallel interface applications. The component shares architectural similarities with other members of the family but differs in packaging and specific electrical parameters.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Verify cross-references with official Renesas resources or authorized distributors for potential alternatives.
ChipApex | Global Electronic Components Supplier








