71T75602S150BG

71T75602S150BG

  • Description:IC SRAM 18MBIT PAR 119PBGA
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tray

SKU:337e38b651a5 Category: Brand:

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Product Detailed Parameters

  • Description:IC SRAM 18MBIT PAR 119PBGA
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tray
  • Memory Type:Volatile
  • Memory Format:SRAM
  • Technology:SRAM - Synchronous, SDR (ZBT)
  • Memory Size:18Mbit
  • Memory Organization:512K x 36
  • Memory Interface:Parallel
  • Clock Frequency:150 MHz
  • Write Cycle Time - Word, Page:-
  • Voltage - Supply:2.375V ~ 2.625V
  • Operating Temperature:0°C ~ 70°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:119-BGA
  • Supplier Device Package:119-PBGA (14x22)
  • Access Time:3.8 ns
  • Grade:-
  • Qualification:-

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71T75602S150BG

Overview

The IDT71T75602S150BG is a synchronous single data rate zero bus turnaround SRAM manufactured by Renesas Electronics Corporation. It provides an 18 Mbit storage capacity organized as 512K words by 36 bits. The device operates with a maximum clock frequency of 150 MHz and features a typical access time of 3.8 ns. It utilizes a parallel interface and requires a supply voltage between 2.375 V and 2.625 V. The component is housed in a 119-pin PBGA package measuring 14x22 mm and supports surface mount installation.

Feature Summary

  • Supports high-speed synchronous data transfer at up to 150 MHz
  • Utilizes zero bus turnaround technology for efficient data throughput
  • Provides wide 36-bit data word organization for system flexibility

Applications

  • High-performance networking equipment memory buffers
  • Telecommunications base station signal processing
  • Industrial automation control systems requiring fast data access

Procurement Notes

Verify the specific suffix configuration against official Renesas documentation, as variations exist within the 71T75602 family regarding temperature range and packaging. Confirm RoHS compliance status, as some variants are non-compliant while others meet ROHS3 standards. Check for End-of-Life notifications or Product Change Notices that may affect long-term availability and sourcing strategies.

Selection Notes

Select this component when a 36-bit data width is required for parallel memory interfaces. Ensure the design accommodates the 2.5V core voltage requirements and the thermal characteristics of the 119-pin BGA package. Compare performance metrics against other members of the 71T75 series to determine if different speed grades or package options better suit the specific application constraints.

Part Context

This part belongs to the IDT71T75 series of synchronous SRAMs designed for high-bandwidth applications. The series offers various speed grades and package configurations to support diverse system architectures. The 71T75602 variant specifically targets applications needing large memory depth with wide data paths, distinguishing it from narrower 18-bit or 72-bit counterparts in the same product line.

71T75602S150BG71T75602S150BG

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