71T75602S150BGGI

71T75602S150BGGI

  • Description:IC SRAM 18MBIT PAR 119PBGA
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tray

SKU:bf2125520eca Category: Brand:

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Product Detailed Parameters

  • Description:IC SRAM 18MBIT PAR 119PBGA
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tray
  • Memory Type:Volatile
  • Memory Format:SRAM
  • Technology:SRAM - Synchronous, SDR (ZBT)
  • Memory Size:18Mbit
  • Memory Organization:512K x 36
  • Memory Interface:Parallel
  • Clock Frequency:150 MHz
  • Write Cycle Time - Word, Page:-
  • Voltage - Supply:2.375V ~ 2.625V
  • Operating Temperature:-40°C ~ 85°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:119-BGA
  • Supplier Device Package:119-PBGA (14x22)
  • Access Time:3.8 ns
  • Grade:-
  • Qualification:-

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71T75602S150BGGI

Overview

The Renesas 71T75602S150BGGI is a synchronous static random-access memory (SRAM) integrated circuit belonging to the ZBT family. It provides an 18 Mbit storage capacity organized as 512K words by 36 bits. The device operates with a parallel interface and supports a maximum clock frequency of 150 MHz, achieving a typical access time of 3.8 ns. It functions within a supply voltage range of 2.375 V to 2.625 V and is housed in a 119-pin PBGA package measuring 14x22 mm.

Feature Summary

  • Supports high-speed data transfer via a parallel interface synchronized with a single clock signal.
  • Utilizes Zero Bus Turnaround technology to minimize latency during read-to-write or write-to-read transitions.
  • Operates on a dedicated 2.5V core voltage supply for stable performance.
  • Designed for surface-mount installation in compact electronic assemblies.

Applications

  • High-performance computing systems requiring fast buffer memory
  • Network infrastructure equipment such as routers and switches
  • Industrial control systems demanding reliable volatile storage

Procurement Notes

Verify component authenticity through authorized channels due to end-of-life status. Confirm RoHS3 compliance and moisture sensitivity level requirements before procurement. Check for valid date codes and packaging integrity upon receipt. Ensure compatibility with existing board designs regarding pinout and thermal specifications.

Selection Notes

Select this model when a 36-bit wide data path is required for system architecture. Consider the 150 MHz speed grade if higher throughput than the 100 MHz variant is necessary. Evaluate the 119-PBGA footprint against available PCB space and soldering capabilities. Compare power consumption characteristics against alternative SRAM families for efficiency optimization.

Part Context

This component is part of the IDT 71T75602 series, originally developed by Integrated Device Technology and later acquired by Renesas Electronics. The series represents a line of high-density synchronous SRAMs designed for broadband and networking applications. The specific suffix indicates the speed bin and package type within the broader product family.

Replacement Considerations

Consult official discontinuation notices for qualified substitute part numbers. Verify that any replacement maintains identical pin configuration and electrical parameters. Ensure the alternative component meets the same environmental and regulatory standards.

71T75602S150BGGI71T75602S150BGGI

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