71T75602S150BGGI8

Overview

The Renesas 71T75602S150BGGI8 is a synchronous static random-access memory (SRAM) integrated circuit organized as 512K by 36 bits, providing an 18-megabit storage capacity. It operates with a maximum clock frequency of 150 MHz and features a typical access time of 3.8 ns. The device utilizes a parallel interface and functions within a supply voltage range of 2.375 V to 2.625 V. It is housed in a 119-pin plastic ball grid array (PBGA) package measuring 14x22 mm. The component supports an operating temperature range from -40°C to +85°C.

Feature Summary

• Zero bus turnaround architecture eliminates dead cycles between read and write operations.
• Single read/write control pin simplifies interface logic requirements.
• Internally synchronized output buffer enable removes external OE control needs.
• Supports four-word burst capabilities for interleaved or linear data transfer.

Applications

• High-performance system cache memory
• Network infrastructure equipment
• Industrial automation controllers

Procurement Notes

Verify the specific suffix BGGI8 against official Renesas documentation to confirm package type and temperature grade. Confirm current availability status as this series may be subject to discontinuation notices. Ensure compatibility with existing board layouts regarding the 119-PBGA footprint and moisture sensitivity level requirements during assembly.

Selection Notes

Select this component when a 36-bit wide data path is required for high-speed synchronous applications. Compare access times and clock frequencies against alternative models in the 71T75602 family to match specific timing constraints. Verify that the 2.5V core voltage aligns with the target system power distribution network.

Part Context

This part belongs to the Renesas 71T75602 series of Zero Bus Turnaround (ZBT) synchronous SRAMs. The series offers various speed grades and package options, including PBGA and TQFP configurations. These devices are designed for applications requiring fast data throughput without the latency associated with traditional synchronous memories.

Replacement Considerations

Check for other speed grades within the 71T75602 family, such as the 100 MHz or 166 MHz variants, if timing requirements differ. Verify pinout compatibility before substituting with other manufacturers' ZBT SRAMs.

FAQ

What is the data organization width of the 71T75602S150BGGI8?

The device is organized as 512K x 36 bits.

Does this SRAM require separate chip enables for depth expansion?

Yes, it provides three chip enables to facilitate simple depth expansion.