71T75602S166BGG

Memory IC Overview

The IDT71T75602S166BGG is a Synchronous Zero Bus Turnaround (ZBT) Static Random-Access Memory (SRAM) organized as 512K x 36, providing an 18 Mbit storage capacity. It operates with a maximum clock frequency of 166 MHz and features a 3.5 ns access time. The device utilizes a 2.5 V core supply voltage within a range of 2.375 V to 2.625 V and supports 2.5 V I/O levels. It is housed in a 119-ball Plastic Ball Grid Array (PBGA) package measuring 14 mm by 22 mm, designed for surface-mount applications across an industrial temperature range.

Memory IC Feature Summary

• Supports high-performance system speeds through synchronous ZBT architecture that eliminates dead cycles between write and read operations.
• Features internally synchronized output buffer enable to remove the requirement for external Output Enable (OE) control signals.
• Includes individual byte write controls allowing precise data masking and modification without affecting other bytes.
• Offers pipelined outputs with a four-word burst capability for efficient sequential data access.

Memory IC Applications

• High-speed networking equipment requiring low-latency memory buffering
• Telecommunications infrastructure systems utilizing synchronous data processing
• Industrial automation controllers needing fast random-access storage

Memory IC Procurement Notes

Verify the specific suffix BGG against official Renesas or IDT documentation to confirm the PBGA-119 package configuration and lead-free status. Confirm current lifecycle status as this component family has faced discontinuation notices. Ensure compatibility with 2.5V logic levels and check for moisture sensitivity handling requirements during assembly.

Memory IC Selection Notes

Select this component when a 512K x 36 organization is required for synchronous applications. The ZBT technology is suitable for designs needing seamless transitions between read and write cycles without bus turnaround delays. Consider the PBGA-119 footprint constraints and 2.5V power supply availability before integration into the system design.

Memory IC Part Context

This part belongs to the IDT 71T75602 series of Synchronous ZBT SRAMs. The series includes variants with different access times and organizations, such as the 1M x 18 configuration. These devices are engineered for high-throughput environments where deterministic timing and high bandwidth are critical performance factors.

Memory IC Replacement Considerations

Check for direct pin-compatible substitutes within the 71T75602 series, such as variants with different speed grades or package options. Verify if newer generations from Renesas offer equivalent functionality with updated packaging or enhanced reliability specifications.