71T75602S166BGGI

71T75602S166BGGI

  • Description:IC SRAM 18MBIT PARALLEL 119PBGA
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tray

SKU:aacb0fea154a Category: Brand:

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Product Detailed Parameters

  • Description:IC SRAM 18MBIT PARALLEL 119PBGA
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tray
  • Memory Type:Volatile
  • Memory Format:SRAM
  • Technology:SRAM - Synchronous, SDR (ZBT)
  • Memory Size:18Mbit
  • Memory Organization:512K x 36
  • Memory Interface:Parallel
  • Clock Frequency:166 MHz
  • Write Cycle Time - Word, Page:-
  • Voltage - Supply:2.375V ~ 2.625V
  • Operating Temperature:-40°C ~ 85°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:119-BGA
  • Supplier Device Package:119-PBGA (14x22)
  • Access Time:3.5 ns
  • Grade:-
  • Qualification:-

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71T75602S166BGGI

Overview

The Renesas Electronics Corporation 71T75602S166BGGI is a synchronous Single Data Rate Zero Bus Turnover SRAM with an 18 Mbit capacity organized as 512K x 36. It operates at a maximum clock frequency of 166 MHz with a 3.5 ns access time. The device uses a parallel interface and requires a supply voltage between 2.375 V and 2.625 V. It is housed in a 119-PBGA package measuring 14x22 mm, supports surface mount installation, and functions within a temperature range of -40°C to +85°C.

Feature Summary

  • Supports high-performance system speeds through synchronous operation with zero bus turnover technology.
  • Features internally synchronized output buffer enable to eliminate the need for external OE control.
  • Includes individual byte write control capabilities for precise data management.

Applications

  • High-speed data buffering in telecommunications equipment
  • Cache memory systems in network infrastructure
  • Digital signal processing applications requiring fast random access

Procurement Notes

Verify component authenticity due to discontinuation status. Confirm RoHS compliance requirements as original versions may not meet current standards. Check for available direct replacements from Renesas. Ensure handling procedures account for moisture sensitivity level 3 specifications during storage and assembly processes.

Selection Notes

Select this component for designs requiring wide 36-bit data paths and low latency. Compare against other variants in the 71T75602 series for package differences or speed grades. Ensure the 119-pin BGA footprint matches the PCB layout constraints. Verify thermal performance meets system requirements under continuous operation conditions.

Part Context

This part belongs to the IDT 71T75602 family of synchronous ZBT SRAMs manufactured by Renesas Electronics. The series offers various configurations including 1M x 18 and 512K x 36 densities. These devices are designed for pipelined applications requiring high throughput without bus turnaround delays.

Replacement Considerations

Direct substitute: 71T75602S166PFG.

71T75602S166BGGI71T75602S166BGGI

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