71T75802S100BGI8

71T75802S100BGI8

  • Description:IC SRAM 18MBIT PAR 119PBGA
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tape & Reel (TR)

SKU:84827d852484 Category: Brand:

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Product Detailed Parameters

  • Description:IC SRAM 18MBIT PAR 119PBGA
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tape & Reel (TR)
  • Memory Type:Volatile
  • Memory Format:SRAM
  • Technology:SRAM - Synchronous, SDR (ZBT)
  • Memory Size:18Mbit
  • Memory Organization:1M x 18
  • Memory Interface:Parallel
  • Clock Frequency:100 MHz
  • Write Cycle Time - Word, Page:-
  • Voltage - Supply:2.375V ~ 2.625V
  • Operating Temperature:-40°C ~ 85°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:119-BGA
  • Supplier Device Package:119-PBGA (14x22)
  • Access Time:5 ns
  • Grade:-
  • Qualification:-

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71T75802S100BGI8

Overview

The 71T75802S100BGI8 is a 18 Mbit synchronous static random access memory (SRAM) organized as 1M x 18. It operates with a maximum clock frequency of 100 MHz and features an access time of 5 ns. The device utilizes a parallel interface and requires a supply voltage between 2.375 V and 2.625 V. It is housed in a 119-pin PBGA package measuring 14x22 mm. The component supports an operating temperature range from -40°C to +85°C.

Feature Summary

  • Zero Bus Turnaround (ZBT) architecture eliminates dead cycles during bus turnaround between read and write operations.
  • Fully pipelined design with internally synchronized output buffer enable for simplified control logic.
  • Supports four-word burst capability in either interleaved or linear modes.
  • Includes individual byte write control pins for precise data masking.

Applications

  • High-performance embedded systems requiring fast memory access
  • Network infrastructure equipment
  • Industrial automation controllers

Procurement Notes

Verify the specific suffix BGI8 against official Renesas documentation to confirm the exact package type and tape-and-reel configuration. Confirm RoHS compliance status, as some variants in this series may differ. Check for end-of-life notifications or obsolescence notices prior to procurement decisions.

Selection Notes

Select this component when a 100 MHz synchronous SRAM with ZBT technology is required. Ensure the system design accommodates the 119-pin PBGA footprint and the specified 2.5V core voltage. Verify that the operating temperature range meets the environmental requirements of the target application.

Part Context

This part belongs to the 71T75802 family of high-speed synchronous SRAMs manufactured by Renesas Electronics. The family offers various speed grades and packaging options to suit different performance and form-factor needs within embedded memory applications.

Replacement Considerations

Consult official Renesas substitution guides for verified alternatives. Cross-reference pinouts and electrical characteristics carefully before considering any third-party equivalents.

71T75802S100BGI871T75802S100BGI8

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