71T75802S133BG8

71T75802S133BG8

  • Description:IC SRAM 18MBIT PARALLEL 119PBGA
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tape & Reel (TR)

SKU:68e6d0e3a225 Category: Brand:

ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:IC SRAM 18MBIT PARALLEL 119PBGA
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tape & Reel (TR)
  • Memory Type:Volatile
  • Memory Format:SRAM
  • Technology:SRAM - Synchronous, SDR (ZBT)
  • Memory Size:18Mbit
  • Memory Organization:1M x 18
  • Memory Interface:Parallel
  • Clock Frequency:133 MHz
  • Write Cycle Time - Word, Page:-
  • Voltage - Supply:2.375V ~ 2.625V
  • Operating Temperature:0°C ~ 70°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:119-BGA
  • Supplier Device Package:119-PBGA (14x22)
  • Access Time:4.2 ns
  • Grade:-
  • Qualification:-

Download product information

71T75802S133BG8

Overview

The Renesas Electronics Corporation 71T75802S133BG8 is a synchronous Single Data Rate Zero Bus Turnaround (ZBT) Static Random Access Memory (SRAM) IC. It provides an 18 Megabit storage capacity organized as 1M x 18 bits. The device operates with a maximum clock frequency of 133 MHz and features a typical access time of 4.2 ns. It utilizes a parallel interface and requires a supply voltage range between 2.375V and 2.625V. The component is housed in a 119-pin Plastic Ball Grid Array (PBGA) package measuring 14x22 mm, designed for surface mount installation.

Feature Summary

  • Zero Bus Turnaround architecture eliminates dead cycles during bus turnaround between read and write operations.
  • Internally synchronized output buffer enable removes the requirement for external Output Enable control signals.
  • Supports individual byte write capabilities via dedicated byte write control pins.
  • Includes boundary scan JTAG interface compliant with IEEE 1149.1 standards.

Applications

  • High-performance embedded systems requiring fast memory access
  • Industrial automation controllers
  • Telecommunications infrastructure equipment

Procurement Notes

Verify component authenticity through authorized channels due to discontinuation status. Confirm RoHS compliance requirements as this specific part may not meet current environmental directives. Validate package dimensions against PCB footprint designs prior to integration. Check for available alternative packages within the same family if supply constraints exist.

Selection Notes

Select this component when system design demands high-speed parallel SRAM with zero wait states. Ensure voltage levels match the 2.5V core specification. Consider the 119-PBGA package constraints for thermal management and board space. Verify that the 133 MHz speed grade meets the target application's timing requirements.

Part Context

This part belongs to the IDT 71T75802 series of synchronous ZBT SRAMs manufactured by Renesas Electronics. The series offers various speed grades and package options, including TQFP and PBGA configurations. The 71T75802S133BG8 specifically denotes the 133 MHz speed bin in the 119-pin BGA format.

Replacement Considerations

Consult manufacturer documentation for pin-compatible alternatives within the 71T75802 family. Verify electrical specifications of substitutes to ensure compatibility with existing system timing and voltage constraints.

71T75802S133BG871T75802S133BG8

Click on the inquiry