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Product Detailed Parameters
- Description:IC SRAM 18MBIT PARALLEL 119PBGA
- Series:-
- Mfr:Renesas Electronics Corporation
- Package:Tape & Reel (TR)
- Memory Type:Volatile
- Memory Format:SRAM
- Technology:SRAM - Synchronous, SDR (ZBT)
- Memory Size:18Mbit
- Memory Organization:1M x 18
- Memory Interface:Parallel
- Clock Frequency:133 MHz
- Write Cycle Time - Word, Page:-
- Voltage - Supply:2.375V ~ 2.625V
- Operating Temperature:0°C ~ 70°C (TA)
- Mounting Type:Surface Mount
- Package / Case:119-BGA
- Supplier Device Package:119-PBGA (14x22)
- Access Time:4.2 ns
- Grade:-
- Qualification:-
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Overview
The Renesas Electronics Corporation 71T75802S133BGG8 is a 18 Mbit synchronous static random access memory (SRAM) device organized as 1M x 18. It operates with a maximum clock frequency of 133 MHz and features a 4.2 ns access time. The component utilizes a parallel interface and requires a supply voltage between 2.375 V and 2.625 V. It is housed in a 119-pin PBGA package measuring 14x22 mm. The device supports an operating temperature range from 0°C to +70°C.
Feature Summary
- Zero Bus Turnaround (ZBT) architecture eliminates dead cycles during bus turnaround between read and write operations.
- Internally synchronized output buffer enable removes the requirement for external OE control signals.
- Single R/W control pin simplifies interface logic by combining read and write command functions.
- Supports four-word burst capability in either interleaved or linear modes.
Applications
- High-performance embedded systems requiring fast data buffering
- Network infrastructure equipment utilizing parallel SRAM interfaces
- Industrial control systems operating within commercial temperature ranges
Procurement Notes
Verify component authenticity through authorized channels due to discontinuation status. Confirm RoHS compliance requirements as this specific variant may not meet current environmental standards. Validate package integrity upon receipt, as moisture sensitivity level 3 requires strict handling protocols. Cross-reference datasheet revisions to ensure compatibility with existing design specifications before integration into production workflows.
Selection Notes
Select this component when a 1M x 18 organization is required with ZBT performance characteristics. Ensure the design accommodates the 119-pin BGA footprint and 2.5V core voltage constraints. Consider thermal management for the 0°C to 70°C operating range. Verify that the system clock does not exceed 133 MHz to maintain the specified 4.2 ns access timing parameters.
Part Context
This part belongs to the 71T75802 series of synchronous SRAMs designed for high-speed data processing applications. The series offers various speed grades and package options, including TQFP and BGA configurations. The 71T75802S133BGG8 specifically targets commercial temperature environments with a 133 MHz clock rate, providing a balance between performance and power consumption for embedded memory solutions.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Due to the product's discontinued status, direct replacements may require redesigning the PCB layout or adapting to different package footprints such as the 100-pin TQFP variants within the same family.
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