71T75802S133BGGI

71T75802S133BGGI

  • Description:IC SRAM 18MBIT PARALLEL 119PBGA
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tray

SKU:356b5ddb51d7 Category: Brand:

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Product Detailed Parameters

  • Description:IC SRAM 18MBIT PARALLEL 119PBGA
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tray
  • Memory Type:Volatile
  • Memory Format:SRAM
  • Technology:SRAM - Synchronous, SDR (ZBT)
  • Memory Size:18Mbit
  • Memory Organization:1M x 18
  • Memory Interface:Parallel
  • Clock Frequency:133 MHz
  • Write Cycle Time - Word, Page:-
  • Voltage - Supply:2.375V ~ 2.625V
  • Operating Temperature:-40°C ~ 85°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:119-BGA
  • Supplier Device Package:119-PBGA (14x22)
  • Access Time:4.2 ns
  • Grade:-
  • Qualification:-

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71T75802S133BGGI

Overview

The Renesas Electronics Corporation 71T75802S133BGGI is a 18Mb synchronous static random-access memory (SRAM) IC organized as 1M x 18. It utilizes Zero Bus Turnaround (ZBT) technology to eliminate dead cycles between read and write operations. The device operates with a maximum clock frequency of 133 MHz and features an access time of 4.2 ns. It requires a supply voltage range of 2.375V to 2.625V and supports an operating temperature range from -40°C to +85°C. The component is housed in a 119-pin PBGA package measuring 14x22 mm.

Feature Summary

  • Zero Bus Turnaround architecture eliminates bus turnaround dead cycles between read and write transitions
  • Internally synchronized output buffer enable removes the need for external OE control signals
  • Single R/W control pin simplifies interface logic for fully pipelined applications
  • Supports individual byte write capability via dedicated BW1-BW4 control lines

Applications

  • High-performance embedded systems requiring fast data buffering
  • Network infrastructure equipment utilizing parallel SRAM interfaces
  • Industrial control systems operating within extended temperature ranges
  • Automotive electronics demanding reliable synchronous memory solutions

Procurement Notes

Verify component authenticity through authorized distributors due to discontinuation status. Confirm RoHS3 compliance and moisture sensitivity level requirements during handling. Check for specific packaging variations such as tray or reel formats if available through secondary markets. Ensure compatibility with existing PCB footprints for the 119-PBGA package before procurement.

Selection Notes

Select this component when ZBT performance is required over standard synchronous SRAM speeds. Consider the 119-PBGA package constraints for board space and thermal management. Evaluate power consumption limits against the specified maximum current draw. Verify that the 1M x 18 organization matches system data width requirements without additional multiplexing.

Part Context

This part belongs to the 71T75802 family of high-speed synchronous SRAMs designed by Renesas. The series offers various speed grades and package options, including TQFP and BGA configurations. The 71T75802S133 variant specifically targets applications needing 133 MHz operation with robust noise immunity and low power consumption characteristics typical of the ZBT architecture.

Replacement Considerations

Publicly confirmed substitute part numbers are not explicitly listed in the provided documentation. Consult official Renesas engineering change notices or distributor cross-reference tools for verified alternatives. Ensure any replacement maintains identical pinout, voltage levels, and timing parameters.

71T75802S133BGGI71T75802S133BGGI

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